A kind of silver nanowire composite graphene memristor and preparation method thereof

A technology of composite graphene and silver nanowires, applied in the direction of electric solid devices, electrical components, circuits, etc., can solve the problems of high cost, complicated preparation process, poor bending of memristors, etc., and achieve good elasticity and simple manufacturing process Effect

Active Publication Date: 2022-03-22
BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a silver nanowire composite graphene memristor and its preparation method, to solve the problems that the memristor produced by the existing method has poor flexibility, complicated preparation process, high cost and unfavorable industrialization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of silver nanowire composite graphene memristor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0048] The present invention also provides a preparation method of a silver nanowire composite graphene memristor, the preparation method comprising the following steps:

[0049] (1) Preparation of flexible first electrode layer: a) The PVDF piezoelectric film with a thickness of less than 300 μm is polarized by the silicon oil thermal polarization method, the thermal polarization electric field strength is 100-160MV / m, and the polarization temperature is 80-100 ℃, the polarization time is 60-120min, so that the non-polar α crystal form of the PVDF piezoelectric film changes to the polar β crystal form, and the piezoelectric performance of the PVDF piezoelectric film is improved; b) after the thermal polarization The upper surface of the PVDF piezoelectric film is plated with an indium tin oxide conductive layer with a thickness of 0.5-10 μm, and the conductive silver glue is used to paste the indium tin oxide conductive layer and the first copper wire together to lead out the ...

Embodiment 1

[0058] The structure of the silver nanowire composite graphene memristor based on the PVDF piezoelectric film prepared in Example 1 is as follows figure 1 As shown, it consists of a flexible first electrode layer 1, a silver nanowire composite graphene layer 2, a flexible second electrode layer 3, a bottom PEF film 4, a silver conductive layer 5, a PVDF piezoelectric film 6, and an indium tin oxide conductive film 7, The top layer of PEF film 8 is composed of a first electrode 9 and a second electrode 10;

[0059] (1) Preparation of flexible first electrode layer: a) The PVDF piezoelectric film with a thickness of less than 300 μm is polarized by the silicon oil thermal polarization method, the thermal polarization electric field strength is 100-160MV / m, and the polarization temperature is 80-100 ℃, the polarization time is 60-120min, so that the non-polar α crystal form of the PVDF piezoelectric film changes to the polar β crystal form, and the piezoelectric performance of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a silver nanowire composite graphene memristor and a preparation method thereof. The PVDF piezoelectric film used in the present invention is a new type of polymer transduction material, which has unique dielectric effect and piezoelectric effect, and has the advantages of good elasticity, light weight, softness, high toughness and the like. The invention organically combines the applications of PVDF piezoelectric film and silver nanowire composite graphene in the field of sensors and memristors, and has important practical significance for the development of low-cost flexible film memory devices. The silver nanowire composite graphene layer is grown on the lower surface of the PVDF piezoelectric film in the flexible first electrode layer, and the device exhibits resistance changes under the action of an external electric field and has memory characteristics. The silver nanowire composite graphene memristor based on the PVDF piezoelectric film provided by the present invention can be used as a storage device, and the manufacturing process is simple. It can be prepared in a large area and then cut into a required size, and has industrialization prospects.

Description

technical field [0001] The invention relates to the technical fields of nanomaterials and flexible printing, in particular to a silver nanowire composite graphene memristor and a preparation method thereof. Background technique [0002] Flexible electronic technology has caused a technological revolution due to its great advantages such as low cost, simple production, environmental protection, and sustainable development. Flexible devices with memory functions that mimic human tactile memory systems are of great significance in the fields of wearable devices, artificial electronic skin, human health, motion monitoring, soft robotics, and artificial intelligence. At present, the main challenge of analog tactile storage systems is how to efficiently sense and store external electrical stimuli through flexible electronic devices. It is usually necessary to convert external electrical stimulation into pressure signals, temperature signals or light signals, etc., and then realiz...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L49/02
CPCH10N97/00
Inventor 刘儒平石月李烨李路海王慰李仲晓
Owner BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap