An ultra-low power consumption memory device and data storage method based on molecular spin state

A technology for data storage and storage devices, applied in the field of ultra-low power storage devices, can solve the problems of high energy consumption and high voltage, and achieve the effects of stable storage, stable spin state, and ultra-low power consumption

Active Publication Date: 2019-01-29
北京大学(天津滨海)新一代信息技术研究院
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for tin phthalocyanine molecules, the voltage used for the different state tr

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An ultra-low power consumption memory device and data storage method based on molecular spin state
  • An ultra-low power consumption memory device and data storage method based on molecular spin state
  • An ultra-low power consumption memory device and data storage method based on molecular spin state

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Au(111) surface that is flat on the single atomic scale can be obtained by multiple rounds of argon ion bombardment and annealing on the surface of the gold single crystal as the substrate. Chloroferric phthalocyanine molecules were placed in an ultra-high vacuum and evaporated from a self-made tantalum boat onto an Au(111) substrate at room temperature. After the ferric phthalocyanine molecules are deposited to form a layer of the ferric phthalocyanine molecules on the surface of the substrate, a probe is arranged on the upper part of the molecular layer to form a memory device.

Embodiment 2

[0033] On the basis of Example 1, such as figure 2 As shown, a platinum-iridium needle tip is used to approach the chloroferric phthalocyanine molecule, and under the conditions of 1mV voltage and 1nA current, scan along the plane parallel to the conductive substrate to perform lateral manipulation on the molecule (lateral manipulation refers to placing the needle tip The starting position near the molecule, and then select the end position of the needle tip movement, the molecule is on the line connecting the two points, and the molecule is manipulated with the movement of the needle tip, and the molecule is displaced on the surface of the matrix through manipulation), so that the phthalo The configuration of the ferric cyanine chloride molecule changes obviously, that is, the reversible and controllable change of the molecular center from bright to dark or from dark to bright can be realized. Such as figure 2As shown in middle A, it is a dark molecular configuration, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an ultra-low power consumption memory device based on a molecular spin state. The memory device comprises a matrix, a data storage medium and a probe. The substrate is an electrically conductive substrate; the data storage medium is a spin-state variable organic molecular layer, and the molecules in the spin-state variable molecular layer are regularly arranged on the surface of the conductive substrate. The probe is used for writing data to and/or reading data stored in a data storage medium. The writing operation includes changing the spin state of the molecule in the spin state variable molecular layer, and the reading operation includes detecting the spin state of the molecule in the spin state variable molecular layer. The spin state variable organic moleculeis a phthalocyanine iron chloride molecule. The invention realizes ultra-low power consumption of the device by using ferric phthalocyanine molecules which are easy to realize different spin state conversion as a storage medium and using lateral manipulation technology under the condition of low voltage and low current to easily control the conversion of different spin states.

Description

technical field [0001] The invention belongs to the technical field of storage devices; in particular, it relates to an ultra-low power consumption storage device. Background technique [0002] The power consumption of electronic devices generally refers to the product of the operating voltage and operating current required for electronic components to work. With the gradual reduction of the size of the integrated circuit process, the improvement of the chip speed and the increase of the scale, the power consumption of the chip is getting larger and larger. The increase in power consumption will first increase energy consumption, and at the same time increase the temperature of the chip when it is working, which will reduce the working stability of the chip and the entire system. In order to increase the working stability, more complex chip packaging technology and cooling technology are required. This increases the cost of the overall system. [0003] Low power consumptio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1673G11C11/1675
Inventor 袁晨阳李若宁李娜侯士敏王永锋
Owner 北京大学(天津滨海)新一代信息技术研究院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap