Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first stacked structure, a second stacked structure, an isolation layer and a gate. The first stacked structure is disposed on a substrate, and includes a first GaN channel layer disposed on the substrate and having an N crystal phase and a first barrier layer disposed on the first GaN channel layer. The second stacked structure is disposed on the substrate, and includes a second GaN channel layer disposed on the substrate and having a Ga crystal phase and a second barrier layer disposedon the second GaN channel layer. The isolation layer is disposed between the first stacked structure and the second stacked structure. The gate is disposed on the first stacked structure, the isolation layer and the second stacked structure. The invention can make the process steps simple, and can reduce the difficulty of manufacture and reduce the production cost.

Description

technical field [0001] The present invention relates to a semiconductor element, and in particular to a semiconductor element with an N-type channel and a P-type channel and a manufacturing method thereof. Background technique [0002] For GaN-based semiconductor elements, due to their advantages of high electron mobility, high voltage resistance, low channel resistance, and fast switching, they have gradually been widely used. In a GaN-based semiconductor element (such as a complementary metal oxide semiconductor transistor (CMOS)) with an N-type channel and a P-type channel, the N-type dopant and the P-type dopant are usually implanted separately by ion implantation. into different channel layers to form N-type channels and P-type channels. [0003] However, during the ion implantation process, dopants need to be accurately implanted into predetermined regions, so the process is relatively difficult and the process steps are complicated. In addition, after the N-type dop...

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Problems solved by technology

[0003] However, in the ion implantation process, dopants need to be accurately implanted into the predetermined area, so the process is difficult and the process steps are relatively complicated

In addition, after the implantation of N-type dopants and P-type dopants, N-type dopants and P-type dopants tend to diffuse in the subsequent high-temperature process, which affects device performance

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