Recovery and treatment method for ITO (indium tin oxide) target
A technology for recycling and processing targets, which is applied in the field of recycling and processing of ITO targets, can solve the problems of lack of suitable recycling and processing solutions, low effective utilization rate, and increased enterprise costs, and achieves low cost, high production efficiency, and reduced resource waste. Effect
Inactive Publication Date: 2019-02-12
江苏比昂电子材料有限公司
View PDF3 Cites 6 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] At present, for the application of ITO targets, the effective utilization rate is low, generally 30-40%, and the used ITO targets cannot be directly applied. In the prior art, is there any suitable recycling and regeneration of ITO targets? Therefore, companies that use ITO targets are generally scrapped, which will inevitably lead to waste of resources and increase the cost of the company. In view of this, it is necessary to develop an ITO that can effectively deal with waste. Target recycling scheme
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] Such as figure 1 As shown, a recycling method for an ITO target includes the following recycling steps:
[0026] S1 pretreatment: Polish the surface of the recovered ITO target to remove surface impurities, and then heat it to 200°C to remove the rough indium on the surface of the polished ITO target;
[0027] S2 pulverization: pulverize the recovered target material after pretreatment into nano powder;
[0028] S3 Purification: put the pulverized target powder into a sintering furnace for high-temperature sintering, further remove the coarse indium and impurities in the powder, and obtain the purified old material powder; the sintering temperature is controlled at 600-800°C;
[0029] S4 New material ingredients: 0.5-1.5 parts by weight of tin oxide and 8.5-9.5 parts of indium oxide are mixed and put into a ball mill to be ball-milled into new material powder; as a preference, the weight ratio of tin oxide and indium oxide is 1:9 ;
[0030] S5 mixed pulping: mix the ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| reflectance | aaaaa | aaaaa |
| water content | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a recovery and treatment method for an ITO (indium tin oxide) target. The method comprises the following recovery and treatment steps: firstly, a recovered target is pretreatedto remove crude indium and impurities on the surface; secondly, the target is then ground into nanopowder; afterwards, the nanopowder is put into a sintering furnace and sintered by high temperaturefor purification, so that purified old material powder is obtained; the old material powder is then uniformly mixed into new material powder and added with purified water, so that mixed slurry is prepared; the mixed slurry is then deaerated and put into a forming mold, so that a target preform is prepared; and finally, the target perform undergoes final sintering for shaping, so that a new high-precision ITO target is obtained. The recovery and treatment method for the ITO target which is disclosed by the invention can regenerate the recovered ITO target into resource, so that the new high-precision ITO target is produced, the waste of resource is reduced, and the enterprise cost is reduced.
Description
technical field [0001] The invention relates to the technical field of ITO target material production, in particular to a recycling and processing method for ITO target material. Background technique [0002] ITO is the abbreviation of Indium and Tin oxide. ITO film is transparent to visible light and has good conductivity. Its transmittance to visible light is ≥95%, its absorption rate to ultraviolet rays is ≥85%, its reflectivity to infrared rays is ≥70%, and its attenuation rate to microwaves is ≥85%. At the same time, the ITO film has excellent processing performance, high hardness, wear resistance and corrosion resistance, and it is easy to etch fine patterns in acidic liquid. Therefore, ITO thin films have been widely used in thin film transistors (TFTs), flat liquid crystal displays (LCDs), electrochromic windows, active and passive components in photovoltaic devices, and infrared radiation reflecting hot mirror films in recent years. , is an extremely important ele...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/626
CPCC04B35/457C04B35/62204C04B35/62605C04B2235/6567C04B2235/77
Inventor 刘洪浩
Owner 江苏比昂电子材料有限公司