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Metal grid high-power vertical cavity surface emitting laser

A vertical cavity surface emission, metal grid technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problem of uneven distribution of laser current density, save volume and cost, reduce cost, and improve power density. Effect

Inactive Publication Date: 2019-02-12
VERTILITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a metal grid high-power vertical cavity surface emitting laser, which is used to solve the problems of uneven current density distribution of large oxide aperture vertical cavity surface emitting lasers, etc.

Method used

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  • Metal grid high-power vertical cavity surface emitting laser

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Embodiment 1

[0044] Such as Figure 1~Figure 5 As shown, this embodiment provides a metal grid high-power vertical cavity surface emitting laser. After research and analysis, the existing vertical cavity surface emitting laser with a ring-shaped upper electrode structure, when the current is injected, the current will mainly concentrate on the emission The edge area of ​​the hole 100, while the current in the middle area of ​​the emission hole 100 is small or even has no current, the current distribution in the edge area of ​​the emission hole 100 is relatively crowded, and there is almost no current distribution in the middle area, which will lead to the overall conversion of the vertical cavity surface emitting laser. The efficiency is low, and the light intensity distribution in the emission hole 100 is not uniform. In order to solve the problems found above, this embodiment provides a vertical cavity surface emitting laser, the vertical cavity surface emitting laser has an emission hol...

Embodiment 2

[0065] Such as Figure 4 and Figure 6 As shown, this embodiment provides a metal grid high-power vertical cavity surface emitting laser, its basic structure is as in embodiment 1, wherein, the difference from embodiment 1 is that the vertical cavity surface emitting laser is a A vertical-cavity surface-emitting laser with a structure, the vertical-cavity surface-emitting laser includes: a P-type conductive lower reflector 208, and the back of the P-type conductive lower reflector 208 has a lower electrode structure 105; an active layer 107 is located on the On the P-type conductive lower reflector 208; N-type conductive upper reflector 206, located on the active layer 107, the P-type conductive lower reflector 208 has a current confinement layer 109, and is limited by the current Layer 109 defines the emission hole 100; the substrate 104 is located on the N-type conductive upper mirror 206; the dielectric layer 110 is formed on the substrate 104; and the upper electrode stru...

Embodiment 3

[0068] Such as Figure 10~Figure 11 As shown, among them, Figure 11 shown as Figure 10 The schematic diagram of the cross-sectional structure at CC' in the middle, this embodiment provides a metal grid high-power vertical cavity surface emitting laser, its basic structure is as in embodiment 1, wherein, the difference from embodiment 1 is that the The plurality of grid line electrodes 102 of the upper electrode are connected to the peripheral electrode 101 at intervals, and are arranged in parallel in the emission hole 100. The polarization structure is formed by the plurality of grid line electrodes 102. By adjusting multiple The distance between the grid wire electrodes 102 is used to adjust the polarization degree of the outgoing light of the vertical cavity surface emitting laser. For example, the smaller the distance between the multiple grid wire electrodes 102, the more the vertical cavity surface emitting laser The higher the degree of polarization of the laser lig...

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Abstract

The invention provides a metal grid high-power vertical cavity surface emitting laser which comprises an emitting hole and a top electrode structure. The top electrode structure comprises a peripheralelectrode and a plurality of grid line electrodes, the peripheral electrode is arranged on the periphery of the emitting hole, and the grid line electrodes are connected with the peripheral electrodeand extend into the emitting hole. The vertical cavity surface emitting laser with large oxidation hole diameter is divided into a plurality of narrow-long block-shaped areas in a current path increasing manner through the grid line electrodes, on one hand, the current density of the middle area of the vertical cavity surface emitting laser with the large oxidation hole diameter can be effectively increased, on the other hand, current can be horizontally spread from the grid line electrodes, the distribution uniformity of the current density in the emitting hole is improved, conversion efficiency is improved, and the coherence of emergent light is kept in wide range. The laser can be applied to the fields of laser radars, infrared cameras, depth identification detectors and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor laser design and manufacture, in particular to a metal grid high-power vertical cavity surface emitting laser. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is developed on the basis of gallium arsenide semiconductor materials. It is different from other light sources such as light-emitting diodes (LEDs) and laser diodes (LDs). It has small size, circular output spot, and single longitudinal mode output. , small threshold current, low price, easy integration into large-area arrays, etc., are widely used in optical communication, optical interconnection, optical storage and other fields. [0003] The Vertical Cavity Surface Emitting Laser (VCSEL) is a new type of laser that emits light from the vertical surface. Its different structure from the traditional edge emitting laser brings many advantages: small divergence angle and circular symmetrical far and near field distri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
CPCH01S5/183H01S5/18308
Inventor 梁栋刘嵩
Owner VERTILITE CO LTD
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