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Single crystal material as well as preparation method and application thereof

A single crystal material and single crystal furnace technology, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problems of low output rate, small single crystal size, easy cracking, etc., and achieve output The effect of high yield, shortened growth cycle, and not easy to crack

Inactive Publication Date: 2019-02-22
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The present invention adopts the method of melting and growing in a single crystal furnace to prepare single crystal materials. Compared with the materials prepared by chemical vapor deposition and chemical vapor transport methods in the prior art, cracking is easy to occur, the output rate is low, and the single crystal size is small. The problem is that the material yield rate obtained by the preparation method of the present invention is high, and the yield rate is ≥90.3%, and the size and shape of the crystal can be effectively controlled by melting and growing in a single crystal furnace. Crystal materials are not easy to crack and can be industrialized

Method used

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  • Single crystal material as well as preparation method and application thereof
  • Single crystal material as well as preparation method and application thereof
  • Single crystal material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A method for preparing a single crystal material comprises the steps of:

[0052] (1) Mix Ta powder and S powder at a molar ratio of 1:2.5 to obtain a mixed powder, put the mixed powder into an alumina crucible, and place the alumina crucible under vacuum in a single crystal furnace In a quartz tube, raise the temperature to 400°C at a rate of 40°C / h, keep it for 24 hours, then raise it to 950°C at a rate of 55°C / h, keep it for 90 hours, and cool down to room temperature to prepare TaS 2 Polycrystalline;

[0053] (2) the TaS 2 polycrystalline, Cu powder and halogen salt are mixed in a molar ratio of 1:0.09:10, and the halogen salt is a mixture of NaCl and KCl in a molar ratio of 1:1 to obtain a precursor;

[0054] (3) Put the precursor into an alumina crucible, place the alumina crucible in a vacuum quartz tube in a single crystal furnace, heat it to 950°C at a heating rate of 95°C / h, and keep it warm for 24h, Then the product was cooled to 850°C at a rate of 10°C / h,...

Embodiment 2

[0057] The difference with Example 1 is that the TaS described in step (2) 2 The molar ratio of polycrystalline, Cu powder and halogen salt is 1:0.06:8.

Embodiment 3

[0059] The difference with Example 1 is that the TaS described in step (2) 2 The molar ratio of polycrystalline, Cu powder and halogen salt is 1:0.16:12.

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Abstract

The invention relates to a single crystal material. The single crystal material is a copper-doped tantalum sulfide single crystal, and is a 2H phase. The preparation method of the single crystal material comprises the following steps: (1) mixing a TaS2 polycrystal, Cu powder and a halide salt to obtain a precursor; and (2) putting the precursor into a single crystal furnace, and performing melt growth, thereby obtaining the crude single crystal material. The single crystal material is prepared in a melt growth manner in the single crystal furnace, the success rate of the prepared material is high, the size and topography of the crystal can be effectively controlled by virtue of the melt growth in the single crystal furnace, the growth cycle is shortened to ten days or less, industrializedproduction can be realized, and the prepared single crystal material is not liable to crack.

Description

technical field [0001] The invention belongs to the field of single crystal material preparation, and in particular relates to a single crystal material, its preparation method and application. Background technique [0002] Metallic transition metal sulfides have novel physical properties such as charge density wave phase transition, superconducting order, iron / antiferromagnetism, etc., which greatly promote the exploration of fundamental problems in condensed matter physics. In addition to the above-mentioned novel physical properties, metallic transition metal sulfides also have very rich application prospects in the fields of electronic devices and energy. [0003] As we all know, one of the biggest bottlenecks in the efficient application of semiconducting transition metal sulfide electronic devices is the extremely high contact resistance between the material and the metal electrode. The work function mismatch between the two causes a huge gap between the interfaces. S...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B35/00
CPCC30B29/46C30B35/00
Inventor 黄明远刘才程涵彦
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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