Purification coil for large-diameter polycrystalline silicon bar stock and method of coil

A polycrystalline silicon rod, large diameter technology, applied in the direction of polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve problems such as affecting product quality, reduce the probability of contamination, facilitate replacement and maintenance, and reduce costs. Effect

Inactive Publication Date: 2019-03-01
CHINA ELECTRONICS TECH GRP NO 46 RES INST
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of frequent furnace disassembly and acid corrosion, it is easy to introduce external impurities, which will affect product quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0026] Example: as Figure 5 to Figure 7 As shown in the figure, the coil designed by the present invention is a split structure, which is composed of a left coil 4 and a right coil 3 symmetrically. The corresponding position is provided with a cooling water tank 8, the water inlet of the cooling water tank 8 is set on the left coil 4, which is sealed by the rubber ring 10, the water outlet is set on the right coil 3, and is sealed by the rubber ring 11. The interface of the cooling water tank 8 of the left and right coils Sealed by rubber ring 9.

[0027] refer to Figure 1 to Figure 4 , using the coil designed by the present invention, the specific use and purification methods are as follows:

[0028] 1. Preparations before vacuum purification: Clean the polycrystalline bar 2 to remove surface organics and large particles; after cleaning, perform acid treatment to remove surface metal impurities; then rinse with deionized water for more than 20 times to remove the acid sol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a purification coil for a large-diameter polycrystalline silicon bar stock and a method of the coil. In the process of melting purification of polycrystalline materials in a vacuum zone, in order to improve the purification efficiency and polycrystalline diameter, a novel coil is designed. Different from the traditional integral coil, the purification coil is splitted intotwo symmetrical parts; as the coil can be splitted into two independent parts, the coil can be removed when the polycrystalline materials above and below the coil are solidified together in a meltingzone, the purified polycrystalline materials are still connected with an upper shaft, and thus disassembly and assembly materials and subsequent pickling procedures are omitted, and the maximum diameter of the grown single crystal is changed from 2 inches to 3 inches, so that the qualified rate of products is improved, the operation procedures are simplified, the probability of contamination by external harmful impurities in the purification process is reduced, the production efficiency is improved, and the cost is reduced. The split type coil is very simple to design and use, and is beneficial to replacement and maintenance.

Description

technical field [0001] The invention relates to the growth technology of fused silicon single crystal in high resistivity and high life area, in particular to a purification coil and method for large-diameter polycrystalline silicon rod material. Background technique [0002] The fused silicon single crystal with high resistivity and high lifetime can be used to prepare microwave dielectric materials, infrared window materials, detectors and other fields. High-purity polysilicon material is required to grow a high-resistivity and long-life zone fused silicon single crystal, and it is currently impossible to produce zone fused polysilicon in China. The resistivity range of molten polysilicon material in the inlet area is 2000-5000 ohm cm. For polysilicon materials with resistivity greater than 5000 ohm cm, it is also difficult to buy in the international market. Vacuum melting and purification of polysilicon with resistivity of 2000-5000 ohm cm can obtain high-purity polysi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/20C30B29/06
CPCC30B13/20C30B29/06
Inventor 刘洪庞炳远董军恒闫萍于鹏李春龙
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap