Semiconductor device and method of forming the same
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as performance improvement
Active Publication Date: 2020-11-27
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, the performance of semiconductor devices composed of MOS transistors in the prior art still needs to be improved
Method used
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Embodiment Construction
[0032] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.
[0033] Figure 1 to Figure 3 It is a structural schematic diagram of the formation process of a semiconductor device.
[0034] refer to figure 1 , providing a substrate; forming a gate structure 110, a source-drain doped layer 120 and a dielectric layer 130, the gate structure 110 is located on the substrate, the source-drain doped layer 120 is located in the substrate on both sides of the gate structure 110, and the dielectric layer 130 is located On the source-drain doped layer 120 and the gate structure 110, there are source-drain ions in the source-drain doped layer 120; source-drain vias 140 .
[0035] refer to figure 2 The surface of the source-drain doped layer 120 at the bottom of the source-drain via hole 140 is doped with contact ions, and the conductivity type of the contact ions is the same as that of the source-drain ions.
[0036] refer to image 3...
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Abstract
The invention discloses a semiconductor device and a method of forming the same. The method comprises the following steps: providing a substrate; forming a gate structure, a source-drain doping layer,and a dielectric layer, wherein the gate structure is located on the substrate, the source-drain doping layer is located in the substrate on both sides of the gate structure, the dielectric layer islocated on the source-drain doping layer and the gate structure, and the source-drain doping layer has source-drain ions; forming a first through hole exposing out of the surface of the source-drain doping layer in the dielectric layer on both sides of the gate structure; cleaning the surface of the source-drain doping layer at the bottom of the first through hole; after the cleaning, forming a first metal layer on the surface of the source-drain doping layer; and after forming the first metal layer, doping contact ions on the surface of the source-drain doping layer at the bottom of the firstthrough hole, wherein the conductivity type of the contact ions is the same as that of the source-drain ions. The method improves the performance of a semiconductor device.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] The working principle of the MOS transistor is: a voltage is applied to the gate structure, and a switching signal is generated by adjusting the current in the channel at the bottom of the gate structure. [0004] However, the ...
Claims
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IPC IPC(8): H01L21/02H01L21/8234H01L27/088
CPCH01L21/02068H01L21/823475H01L27/088
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP