A light-emitting diode epitaxial wafer and its manufacturing method
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing efficiency and reducing luminous efficiency, and achieve the effects of large energy band gap, improving luminous efficiency, and reducing defects.
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[0027] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0028] An embodiment of the present invention provides a light emitting diode epitaxial wafer, figure 1 It is a schematic structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present invention, as shown in figure 1 As shown, the light-emitting diode epitaxial wafer includes a substrate 1 , and a buffer layer 2 , an undoped GaN layer 3 , an N-type layer 4 , a multi-quantum well layer 5 and a P-type layer 6 stacked on the substrate 1 in sequence.
[0029] The multi-quantum well layer 5 is a multi-period superlattice structure, and each superlattice structure includes an InGaN quantum well layer 51, a transition layer 52 and a GaN quantum barrier layer 53 stacked on the InGaN quantum well layer 51 ...
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