Coaxial TSV-structure pinboard and fabrication method thereof

A manufacturing method and a technology of an adapter board, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the complex manufacturing process of coaxial TSV structures, the selection of intermediate dielectric layer materials, and the repeatability of manufacturing methods and processes Difficult, unable to achieve engineering mass production and other issues, to achieve ultra-vertical transmission loss, controllable repeatability, and low cost effects

Active Publication Date: 2019-03-12
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the prior art, the manufacturing process of the coaxial TSV structure is relatively complicated. Generally, the manufacturing process is made in the order of the metal layer of the outer ring of the TSV hole, the intermediate dielectric layer and the copper pillar structure of the inner ring. In order to ensure the metal layer of t

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  • Coaxial TSV-structure pinboard and fabrication method thereof
  • Coaxial TSV-structure pinboard and fabrication method thereof
  • Coaxial TSV-structure pinboard and fabrication method thereof

Examples

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Example Embodiment

[0039] Example one

[0040] The coaxial TSV structure adapter board of the present invention includes an outer ring metal layer, an intermediate dielectric layer and an inner ring copper pillar structure; wherein the thickness of the outer ring metal layer is between 1-2 μm, and the sidewall metalization is realized The diameter of the inner ring copper pillar structure is between 20-30 μm, and the thickness of the intermediate dielectric layer is adjustable to achieve 50 ohm matching with the outer ring metal layer and the inner ring copper pillar structure. The thickness of the dielectric layer generally ranges between 10-20 μm, and the depth of the coaxial TSV structure is 200 μm.

[0041] In order to manufacture the adapter board, the present invention provides a manufacturing method of a coaxial TSV structure adapter board, which at least includes the following steps:

[0042] Step S1: preprocessing the silicon wafer, the silicon wafer having corresponding front and back sides;...

Example Embodiment

[0065] Example two

[0066] In this embodiment, the thickness of the outer ring metal layer is 1.5 μm, the diameter of the inner ring copper pillar structure is 20 μm, and the intermediate dielectric layer is selected from benzocyclobutene (BCB, dielectric constant 2.65, dielectric loss 0.0008) The thickness is 20 μm to achieve 50 ohm matching between the intermediate dielectric layer, the outer ring metal layer and the inner ring copper pillar structure, and the depth of the coaxial TSV structure is 200 μm. Such as Figure 1 to 8 As shown, in order to manufacture the coaxial TSV structure adapter plate of this embodiment, the present invention provides a method for manufacturing a coaxial TSV structure adapter plate, which includes at least the following steps:

[0067] Step S1: Provide a silicon wafer 1, with a crystal orientation, polished on both sides, with a thickness of 320μm, see figure 1 ;

[0068] Step S2: on the front surface of the silicon wafer 1, fabricate a first in...

Example Embodiment

[0083] Example three

[0084] In the coaxial TSV structure adapter board of this embodiment, the thickness of the outer ring metal layer is 1.5 μm, the diameter of the metal copper pillar is 30 μm, and the intermediate dielectric layer is made of polyimide (PI, dielectric Constant 2.9, dielectric loss 0.01) The thickness is 47.5 μm, which can achieve 50 ohm matching with the outer ring metal layer and the inner ring copper pillar structure, and the depth of the coaxial TSV structure is 200 μm.

[0085] In this embodiment, the manufacturing method of the coaxial TSV structure adapter plate at least includes the following steps:

[0086] Step S1: Provide a silicon wafer 1 with a crystal orientation, polished on both sides, and a thickness of 320 μm;

[0087] Step S2: on the front surface of the silicon wafer 1, fabricate the first inner ring copper pillar structure 2 and the second inner ring copper pillar structure 3. First, spin-coated AZ4620 photoresist on the front surface of the ...

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Abstract

The invention discloses a coaxial TSV-structure pinboard and a fabrication method thereof. The fabrication method comprises the steps of pre-processing a silicon wafer, wherein the silicon wafer is provided with a front surface and a rear surface which are corresponding to each other; processing an inner-ring copper cylinder structure on the front surface; fabricating a silicon blind hole with a large external diameter in a back surface by taking a metal copper cylinder of the inner-ring copper cylinder structure as a center; processing and forming an outer-ring metal layer on a surface of a side wall of the silicon blind hole; filling and curing an intermediate dielectric layer in the silicon blind hole with the outer-ring metal layer; processing the front surface and the rear surface until the surface is planarized, processing the front surface until the intermediate dielectric layer is exposed, and processing the rear surface until the metal copper cylinder of the inner-ring coppercylinder structure is exposed; and processing a coaxial TSV hole bonding pad and a coaxial TSV hole interconnection transmission line on the front surface and the back surface to form a silicon pinboard with a TSV coaxial structure. By the fabrication method, the polymer medium filling process is simplified, the fabrication method is controllable and is good in repeatability, and mass production and fabrication is favorably achieved.

Description

technical field [0001] The invention relates to the technical field of adapter boards, in particular to a coaxial TSV structure adapter board and a manufacturing method thereof. Background technique [0002] With the development of light weight, thinner, miniaturized, increasing number of I / O terminals and diversified functions, the traditional two-dimensional integration technology can no longer meet the requirements of high density, and the problems of signal distortion and delay are becoming more and more serious. System integration design More and more engineers are turning to 3D Integration and system-level integration technologies. [0003] Silicon is an ideal substrate material for wafer-level and three-dimensional integration. It has good mechanical and thermal properties and is an important semiconductor material. The processing technology of silicon materials is mature, and various micromachining processes can be performed, and back groove structures and through-s...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/528
CPCH01L21/76837H01L21/76838H01L23/528
Inventor 王强文郭育华王运龙刘建军邱颖霞
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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