Coaxial TSV-structure pinboard and fabrication method thereof

Abstract

The invention discloses a coaxial TSV-structure pinboard and a fabrication method thereof. The fabrication method comprises the steps of pre-processing a silicon wafer, wherein the silicon wafer is provided with a front surface and a rear surface which are corresponding to each other; processing an inner-ring copper cylinder structure on the front surface; fabricating a silicon blind hole with a large external diameter in a back surface by taking a metal copper cylinder of the inner-ring copper cylinder structure as a center; processing and forming an outer-ring metal layer on a surface of a side wall of the silicon blind hole; filling and curing an intermediate dielectric layer in the silicon blind hole with the outer-ring metal layer; processing the front surface and the rear surface until the surface is planarized, processing the front surface until the intermediate dielectric layer is exposed, and processing the rear surface until the metal copper cylinder of the inner-ring coppercylinder structure is exposed; and processing a coaxial TSV hole bonding pad and a coaxial TSV hole interconnection transmission line on the front surface and the back surface to form a silicon pinboard with a TSV coaxial structure. By the fabrication method, the polymer medium filling process is simplified, the fabrication method is controllable and is good in repeatability, and mass production and fabrication is favorably achieved.

Description

technical field [0001] The invention relates to the technical field of adapter boards, in particular to a coaxial TSV structure adapter board and a manufacturing method thereof. Background technique [0002] With the development of light weight, thinner, miniaturized, increasing number of I / O terminals and diversified functions, the traditional two-dimensional integration technology can no longer meet the requirements of high density, and the problems of signal distortion and delay are becoming more and more serious. System integration design More and more engineers are turning to 3D Integration and system-level integration technologies. [0003] Silicon is an ideal substrate material for wafer-level and three-dimensional integration. It has good mechanical and thermal properties and is an important semiconductor material. The processing technology of silicon materials is mature, and various micromachining processes can be performed, and back groove structures and through-s...

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Problems solved by technology

[0006] However, in the prior art, the manufacturing process of the coaxial TSV structure is relatively complicated. Generally, the manufacturing process is made in the order of the metal layer of the outer ring of the TSV hole, the intermediate dielectric layer and the copper pillar structure of the inner ring. In order to ensure the metal layer of the outer ring, the intermediate dielectric layer and the The state of the adjacent structures of the inner ring copper pillar structure is stable, and there are great difficulties in the material selection, manufacturing method, and process repeatability of the intermediate dielectric layer, and it is impossible to realize engineering mass production

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