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Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control

A magnetron and control processing technology, applied in the field of plasma processing, can solve problems affecting the uniformity of substrate processing

Inactive Publication Date: 2019-03-15
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, other factors such as process conditions or process chamber design can also undesirably affect process uniformity across the substrate

Method used

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  • Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
  • Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
  • Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control

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Experimental program
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Embodiment Construction

[0024] Embodiments of the present principles relate to a high resolution control system capable of process control based on the angular and / or radial position of the magnetron in real time. For example, magnetron position and / or angle can be used as input parameters to control power supplies that directly affect the process, thereby adding a new layer of control to the resulting deposited film or etch target. Embodiments of the present principles can advantageously reduce, control, or eliminate induced process rate non-uniformities in plasma processing chambers, such as center-fast, center-slow, side-to-side, or asymmetric skew across a substrate. Skew generally refers to the difference in process results from one area of ​​the substrate to another. As an illustrative example, a process result may be the amount of material deposited on a target surface of a substrate by a physical vapor deposition operation, or the amount of material removed from a substrate during an etching ...

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PUM

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Abstract

A method, an apparatus and a system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process withina process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location on a surface of the substrate and modulating a power parameter of atleast one power supply affecting substrate processing based on the determined position of the magnetron to control, for example, at least one of a deposition rate or an etching rate of the substrate processing. In one embodiment, the modulated power parameter is a power set point of at least one of a direct current (DC) source power, a radio frequency (RF) bias power, a DC shield bias voltage, oran electromagnetic coil current of the at least one power supply.

Description

technical field [0001] Embodiments of the present disclosure relate to plasma processing in semiconductor processing chambers. Background technique [0002] Reliably producing sub-micron and smaller features is one of the challenges for the next generation very large scale integration (VLSI) and ultra large scale integration (ULSI) of semiconductor devices. However, as circuit technology continues to be miniaturized, the shrinking interconnect dimensions of VLSI and ULSI technologies have placed additional demands on processing power. For example, as circuit density increases for next-generation devices, the width of interconnects (such as vias, trenches, contacts, gate structures, and other features) and the dielectric material between interconnects decreases, while The thickness of the dielectric layer remains substantially constant, with the result that the aspect ratio of the features increases. . [0003] Sputtering (also known in one application as physical vapor de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35H01J37/34
CPCC23C14/35C23C14/542C23C14/5806H01J37/3266H01J37/32697H01J37/3455H01J37/3476H01J37/3408C23C14/541H01J37/32027H01J37/32082H01J37/32715H01J2237/334H01L21/2855H01L21/3065H01L22/26
Inventor 马丁·李·瑞克基思·A·米勒谢列康·盖亚卡卡尔·R·约翰逊
Owner APPLIED MATERIALS INC