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Process for preparing sheet trititanium pentoxide by TiC reduction

A technology for titanium pentoxide and titanium dioxide is applied in the field of preparation of flake titanium pentoxide and titanium pentoxide by reducing TiC, and can solve the problems of extremely high production equipment requirements, difficult to guarantee safety factor, harsh reaction conditions and the like. , to achieve the effect of reducing production cost, shortening pre-melting time, and low outgassing

Inactive Publication Date: 2019-03-19
XUZHOU NORMAL UNIVERSITY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the reaction conditions of this method are harsh. Not only does it require a high vacuum environment, the required temperature is also higher than 1800°C, which requires extremely high production equipment, which greatly increases the production cost, and the safety factor is difficult to guarantee.

Method used

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  • Process for preparing sheet trititanium pentoxide by TiC reduction
  • Process for preparing sheet trititanium pentoxide by TiC reduction
  • Process for preparing sheet trititanium pentoxide by TiC reduction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Step 1: According to the mass ratio of titanium carbide: titanium dioxide = 1:8.5, weigh the raw materials titanium carbide and titanium dioxide respectively, add water and ball mill for 24 hours, the ball milling speed is 150r / min, the mass ratio of water and mixed powder is 2.5:1; take out the material after ball milling Dry in a drying oven at 60°C, take out the mixture after drying is complete, pass through a 100-mesh sieve after mechanical grinding; adopt dry pressing, the pressure is 1.5MPa, and the time is 60s to obtain the mixture tablet;

[0037] Step 2: Put the mixed material tablet obtained in step 1 into a crucible and place it in a muffle furnace, and pass argon gas into the furnace cavity for 20 minutes to exhaust the air in the furnace cavity;

[0038] Step 3: Sintering in stages, and continuously feed argon gas throughout the sintering process, the steps are as follows:

[0039] A. Room temperature ~ 1100°C, heating rate 1°C / min;

[0040] B.1100℃, keep ...

Embodiment 2

[0050]Step 1: According to the mass ratio of titanium carbide: titanium dioxide = 1:10, weigh the raw materials titanium carbide and titanium dioxide respectively, add water and ball mill for 28 hours, the ball milling speed is 250r / min, the mass ratio of water and mixed powder is 3:1; take out the material after ball milling Dry in an oven at 80°C, take out the mixture after drying is complete, and pass through a 100-mesh sieve after mechanical grinding; use dry pressing to form, the pressure is 3MPa, and the time is 15s to obtain the mixture tablet;

[0051] Step 2: Put the mixed material tablet obtained in step 1 into a crucible and place it in a muffle furnace, and pass argon gas into the furnace cavity for 20 minutes to exhaust the air in the furnace cavity;

[0052] Step 3: Sintering in stages, and continuously feed argon gas throughout the sintering process, the steps are as follows:

[0053] A. Room temperature ~ 1100°C, heating rate 2°C / min;

[0054] B.1100℃, keep wa...

Embodiment 3

[0063] Step 1: According to the mass ratio of titanium carbide: titanium dioxide = 1:9.5, weigh the raw materials titanium carbide and titanium dioxide respectively, add water and ball mill for 28 hours, the ball milling speed is 200r / min, the mass ratio of water and mixed powder is 5:1; take out the material after ball milling Dry in a drying oven at 60°C, take out the mixed material after drying, and pass through a 100-mesh sieve after mechanical grinding; use dry pressing, the pressure is 3MPa, the time is 15s, followed by cold isostatic pressing, the parameter is 250MPa, the time is 15s Be 400s, obtain mixed material compression tablet;

[0064] Step 2: Put the mixed material tablet obtained in step 1 into a crucible and place it in a muffle furnace, and pass nitrogen into the furnace cavity for 20 minutes to exhaust the air in the furnace cavity;

[0065] Step 3: Sintering in stages, and nitrogen gas is continuously fed throughout the sintering process, the steps are as f...

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Abstract

The invention discloses a process for preparing sheet trititanium pentoxide by TiC reduction, comprising the following steps: respectively weighing raw materials titanium carbide and titanium dioxideaccording to the mass ratio of titanium carbide to titanium dioxide of 1: (8.5-10), adding water for ball milling and mixing, drying, grinding, sieving, tabletting, then performing staged sintering inan inert atmosphere, and finally cooling to obtain the product. According to the invention, sheet trititanium pentoxide crystals can be prepared, with the purity reaching 99.99%, and the output being86-88%; the sheet trititanium pentoxide crystals can shorten the coating film pre-melting time, and improve the coating efficiency; furthermore, after adopting a physical ball mixing and mixing method, the sheet trititanium pentoxide crystals are directly obtained by calcining in a temperature interval around 1300 DEG C in one step, the temperature is lower than conventional industrial temperature by higher than 500 DEG C, a vacuum environment is not needed, and equipment requirement is low.

Description

technical field [0001] The invention relates to the fields of coating materials, catalytic chemical materials, data storage and new energy, and relates to a preparation process of titanium pentoxide, in particular to a process for preparing sheet-shaped titanium pentoxide by reduction of TiC. Background technique [0002] Titanium pentoxide is a blue-black non-stoichiometric compound with metallic luster. Its density is about 4.29g / cm 3 , melting point 2180 ℃, oxygen-titanium atomic ratio between 1.66 ~ 1.70, both semiconductor and metal properties, acid and alkali corrosion resistance, can replace noble metals as electrode materials. And because of its small temperature resistance coefficient, but the resistance can change with the change of atmosphere, it is also a potential oxygen sensitive material. [0003] Titanium dioxide thin film has excellent mechanical, chemical, optical and electrical properties, and is the most important dielectric thin film material in optica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/46C04B35/622C04B35/64
CPCC04B35/46C04B35/622C04B35/64C04B2235/3232C04B2235/3843C04B2235/602C04B2235/656C04B2235/6562C04B2235/6565C04B2235/6567
Inventor 张乐杨顺顺魏帅李晨李洪亮陈浩
Owner XUZHOU NORMAL UNIVERSITY
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