Deep groove power device and manufacturing method thereof

A power device and deep trench technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as complex process, high difficulty in control, difficulty in guaranteeing device performance and parameter consistency, and achieve improved trench The effect of improving track density, improving insulation reliability, reducing process difficulty and process control difficulty

Pending Publication Date: 2019-03-19
上海昱率科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The current limitation of deep trench MOSFET is that the process is complicated and the control is difficult. The source polysilicon and gate polysilicon are formed in a small trench, and the thickness of the insulating dielectric body and the thickness of the gate oxide layer need to be precisely controlled. The production equipment and process The manufacturing process puts forward very high requirements, and the device performance and parameter consistency are difficult to guarantee

Method used

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  • Deep groove power device and manufacturing method thereof
  • Deep groove power device and manufacturing method thereof
  • Deep groove power device and manufacturing method thereof

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Embodiment Construction

[0022] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0023] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention relates to a deep groove power device, wherein the power device is divided into a cellular area and a terminal area; the power device comprises a substrate, a drain metal is arranged atthe lower portion of the substrate, an epitaxial layer is arranged on the substrate, a body region is arranged on the epitaxial layer, a cellular area groove and a terminal area groove are formed in the body area, the cellular area groove and the terminal area groove extend downwards from the surface of the body area to the inside of the epitaxial layer. The groove is filled with first conductivepolycrystalline silicon connected with the source electrode and second conductive polycrystalline silicon connected with the grid electrode. A second insulating medium body is arranged between the first conductive polycrystalline silicon and the second conductive polycrystalline silicon.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a deep trench power device and a manufacturing method thereof. Background technique [0002] In the field of power semiconductor devices, deep trench MOSFETs can effectively increase channel density and reduce characteristic on-resistance and parasitic capacitance, so deep trench MOSFETs have been widely used. The current limitation of deep trench MOSFET is that the process is complicated and the control is difficult. The source polysilicon and gate polysilicon are formed in a small trench, and the thickness of the insulating dielectric body and the thickness of the gate oxide layer need to be precisely controlled. The production equipment and process The manufacturing process puts forward very high requirements, and it is difficult to guarantee the consistency of device performance and parameters. Contents of the invention [0003] In view of this, an object of the present discl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/10H01L29/423H01L29/06H01L21/336
CPCH01L29/785H01L29/0684H01L29/1037H01L29/4236H01L29/66477
Inventor 杨东林陈文高刘侠
Owner 上海昱率科技有限公司
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