Metal nanowire/graphene conducting material with silk serving as substrate and preparation method of metal nanowire/graphene conducting material

A technology of metal nanowires and conductive materials, applied in textiles and papermaking, fiber processing, animal fibers, etc., can solve problems such as weak bonding fastness, achieve great practical value, avoid biological safety and easy oxidation, and improve biological phase. Effects of capacitive and mechanical properties

Inactive Publication Date: 2019-03-26
NANTONG TEXTILE & SILK IND TECH RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the interaction between silver nanowires and textiles is mainly based on physical adsorption, and the binding fastness is relatively weak, and the silver nanowires are mostly in a randomly distributed state (electronic textiles based on silver nanowire conductive network[J].Chemical Progress, 2017,29(08):892-901)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Soak the silk fabric in 1% by mass fraction of γ-aminopropyltriethoxysilane ethanol solution for 24 hours to obtain γ-aminopropyltriethoxysilane modified silk fabric. (2) Using the dipping and pulling method (pulling speed 0.1cm / s), the silver nanowire ethanol dispersion with a mass fraction of 0.1% is adsorbed on the surface of the above-mentioned γ-aminopropyltriethoxysilane modified silk fabric, The silver nanowires have a diameter of 20 nm and a length of 20 μm, and are repeatedly washed and dried with deionized water and ethanol after being taken out. (3) The above-mentioned silk fabric is deflected 60° in the clockwise direction, and the silver nanowire with a mass fraction of 0.1% is adsorbed on the surface of the silk fabric by dipping and pulling method (pulling speed 0.1cm / s) again. The nanowires have a diameter of 20 nm and a length of 100 μm. (4) Immerse the above silk fabric in a 1g / L graphene oxide aqueous solution for 60min, take it out, wash it repe...

Embodiment 2

[0021] (1) Soak the silk fabric in a 3% γ-aminopropyltriethoxysilane ethanol solution for 24 hours to obtain γ-aminopropyltriethoxysilane-modified silk fabric. (2) Adsorb the ethanol dispersion of copper nanowires with a mass fraction of 5% on the surface of the above-mentioned γ-aminopropyltriethoxysilane modified silk fabric by using the dipping and pulling method (the pulling speed is 0.5cm / s) , the copper nanowires have a diameter of 50 nm and a length of 40 μm, and after being taken out, they are repeatedly washed and dried with deionized water and ethanol. (3) The above-mentioned silk fabric is deflected 90° in the clockwise direction, and the copper nanowires with a mass fraction of 5% are adsorbed on the surface of the silk fabric by using the dipping and pulling method (the pulling speed is 0.5cm / s) again. The copper nanowires have a diameter of 50 nm and a length of 150 μm. (4) Immerse the above-mentioned silk fabric in the graphene oxide aqueous solution of 1-100g / ...

Embodiment 3

[0023] (1) Soak the silk fabric in a 5% gamma-aminopropyltriethoxysilane ethanol solution for 24 hours to obtain gamma-aminopropyltriethoxysilane-modified silk fabric. (2) Adsorb the ethanol dispersion of gold nanowires with a mass fraction of 10% on the surface of the above-mentioned gamma-aminopropyltriethoxysilane modified silk fabric by using the dipping and pulling method (the pulling speed is 1cm / s), The gold nanowires have a diameter of 100 nm and a length of 60 μm, and are repeatedly washed and dried with deionized water and ethanol after being taken out. (3) The above-mentioned silk fabric is deflected 120° in the clockwise direction, and the gold nanowires with a mass fraction of 10% are adsorbed on the surface of the silk fabric by using the dipping and pulling method (the pulling speed is 1cm / s). The nanowires have a diameter of 100 nm and a length of 200 μm. (4) Immerse the above silk fabric in 100g / L graphene oxide aqueous solution for 600min, take it out, wash ...

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Abstract

The invention discloses a metal nanowire/graphene conducting material with silk serving as a substrate and a preparation method of the metal nanowire/graphene conducting material. A silk fabric is used as a framework material, and a metal nanowire is firmly attached to the surface of the silk fabric by utilizing a chelating action between gamma-aminopropyl triethoxysilane serving as a silane coupling agent and the metal nanowire and a coating action of graphene oxide/silk fibroin. Due to the coating of graphene oxide/silk fibroin, the biocompatibility and mechanical property of a silk conducting film material are improved, and the problems such as biological safety and oxidizability of the metal nanowire are effectively avoided; and the metal nanowire/graphene conducting material has a huge practical value in the fields such as wearable devices, implantable devices, intelligent clothing and flexible photovoltaic cells.

Description

technical field [0001] The invention relates to a metal nanowire / graphene conductive material based on silk and a preparation method thereof, belonging to the field of photoelectric materials and nanometer materials. Background technique [0002] Conductive materials play an extremely important role in electronic textiles, mainly for the transmission of electrical energy and signals. Typically, textiles can be made conductive by coating them with conductive polymers or by mixing stainless steel fibers, silver wires, and textile fibers. However, the electrical resistance of conductive polymers is too high in practical applications, and it will affect the wearing comfort, hand feeling and breathability and moisture permeability of textiles. Stainless steel fibers and silver wires lack flexibility to meet the needs of flexible wearables. The emergence of conductive nanomaterials such as graphene, carbon nanotubes, and one-dimensional metal nanowires provides a good opportunit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): D06M11/83D06M13/513D06M11/74D06M15/15D06M13/123D06M101/12
CPCD06M11/74D06M11/83D06M13/123D06M13/513D06M15/15D06M2101/12
Inventor 赵兵祁宁张岩陈国强
Owner NANTONG TEXTILE & SILK IND TECH RES INST
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