Low-corrosion aluminum wire cleaning solution

Abstract

The invention belongs to the technical field of wafer manufacturing, and relates to a low-corrosion aluminum wire cleaning solution, which comprises 0.01-1 wt% of fluoride, 0.1-1 wt% of organic alcohol amine, 50-70 wt% of organic solvent, 0.1-1 wt% of organic amine, 0.1-1 wt% basic organic matter, 0 .01-2wt% of corrosion inhibitor and the balance of deionized water. The basic organic substance includes one of a phosphonium salt, 1,8-diazabicycloundec-7-ene, and choline. The organic amine includes one of 2-amino-2-methyl-1-propanol, 1-amino-2-propanol, N,N-diethyl-1,3-propanediamine, N,N-diethyl hydroxylamine, triethylene tetramine, and pentamethyl diethylenetriamine. According to the low-corrosion aluminum wire cleaning solution, under the condition of no temperature control, photoresist residues are removed, attacks to a substrate are smaller, and the low-corrosion aluminum wire cleaning solution has better market competitiveness.

Description

technical field [0001] The invention relates to the technical field of wafer manufacturing, in particular to a low-corrosion aluminum wire cleaning solution with good photoresist residue removal effect and less attack on substrates. Background technique [0002] In the modern IC manufacturing process, the reaction products of metal wiring channels and cutouts after dry etching need to be cleaned by wet cleaning with fluorine-based chemicals. In the production of aluminum wires with a line width below 0.35 μm, the micro-etching effect of the chemical solution on the aluminum wires is difficult to ignore, which will lead to instability of key parts of the semiconductor. [0003] At present, in the field of semiconductor wafer manufacturing, the aluminum wire cleaning solution generally works at a relatively high process temperature (50-75°C), and there are problems of weak cleaning effect or strong attack on the substrate. [0004] Our company once invented a fluorine-contain...

AI Technical Summary

Problems solved by technology

In the production of aluminum wires with a line width of less than 0.35 μm, the micro-etching effect of the chemical solution on the aluminum wire is difficult to ignore, which will lead to instability of key parts of the semiconductor

[0003] At present, in the field of semiconductor wafer manufacturing, the aluminum wire cleaning solution generally works at a relatively high process temperature (50-75°C), and there are problems such as weak cleaning effect or strong attack on the substrate

[0004] Our company once invented a fluorine-containing aluminum wire cleaning solution (application number: CN201710753848.5), which is used to remove photoresist residues and reduce the attack on the substrate, but with the increase of customer requirements, the corrosion rate is still not ideal

Especially for Al-Si-Cu materials and ILD2 dielectric materials, the amount of corrosion is too large

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