Optimization method for large-power green-light LED epitaxial structure of Si substrate

A technology of epitaxial structure and optimization method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of less than 40% external quantum efficiency, unsatisfactory development of green LED, and limited effect, so as to alleviate the decline of quantum efficiency, Effect of reducing carrier leakage and reducing polarization electric field

Inactive Publication Date: 2019-03-29
江苏晶曌半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Over the years, the luminous efficiency of purple and blue LEDs has developed rapidly. The external quantum efficiency of AlGaInN blue LEDs has exceeded 80%. However, the development of green LEDs is not satisfactory, and the external quantum efficiency

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  • Optimization method for large-power green-light LED epitaxial structure of Si substrate
  • Optimization method for large-power green-light LED epitaxial structure of Si substrate
  • Optimization method for large-power green-light LED epitaxial structure of Si substrate

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Example Embodiment

[0029] Example 1

[0030] This embodiment provides a method for optimizing the epitaxial structure of a high-power green LED on a Si substrate. The structure is grown in a MOCVD system, using TMAl, TMGa, NH 3 And CP 2 Mg is used as Al source, Ga source, N source and Mg dopant, H 2 As a carrier gas. The optimization method of the Si substrate high-power green LED epitaxial structure specifically includes the following steps:

[0031] (1-1) Wash the purchased Si substrate (Si(111)) with a thickness of 800 microns in ethanol, acetone and deionized water for 20 minutes, dry at 100°C and place it in a MOCVD glove box, and then move the substrate with a suction cup On the substrate tray of the reaction chamber, the surface temperature of the epitaxial wafer is raised to 1050°C in a hydrogen atmosphere, and the surface oxide is completely removed by heat treatment for 5 min to obtain a Si substrate 1;

[0032] (1-2) The temperature in the reaction chamber is cooled to 1000℃, and trimethyla...

Example Embodiment

[0046] Example 2

[0047] This embodiment provides a method for optimizing the epitaxial structure of a high-power green LED on a Si substrate. The structure is grown in a MOCVD system, using TMAl, TMGa, NH 3 And CP 2 Mg is used as Al source, Ga source, N source and Mg dopant, H 2 As a carrier gas. It includes the following steps:

[0048] (2-1) Wash the purchased Si substrate (Si(111)) with a thickness of 800 microns in ethanol, acetone and deionized water for 30 minutes, dry at 80°C and place it in a MOCVD glove box, and then move the substrate with a suction cup On the substrate tray of the reaction chamber, the surface temperature of the epitaxial wafer is raised to 1100°C in a hydrogen atmosphere, and the surface oxide is completely removed by heat treatment for 5 min to obtain a Si substrate 1;

[0049] (2-2) Cooling the temperature in the reaction chamber to 1000°C, first pass in TMAl for 10s, then pass in NH 3 , The pressure is 200 mbar, the molar ratio of V / III is 400, and ...

Example Embodiment

[0062] Example 3

[0063] In this embodiment, a method for optimizing the epitaxial structure of a high-power green LED on a Si substrate is to grow the structure in a MOCVD system, using TMAl, TMGa, NH 3 And CP 2 Mg is used as Al source, Ga source, N source and Mg dopant respectively, H 2 As a carrier gas. It includes the following steps:

[0064] (3-1) Wash the purchased Si substrate (Si(111)) with a thickness of 800 microns in ethanol, acetone and deionized water for 30 minutes, dry at 90°C and place it in a MOCVD glove box, and then move the substrate with a suction cup On the substrate tray of the reaction chamber, the surface temperature of the epitaxial wafer is raised to 1100°C in a hydrogen atmosphere, and the surface oxide is completely removed by heat treatment for 3 min to obtain a Si substrate 1;

[0065] (3-2) Cooling the temperature in the reaction chamber to 900°C, first pass in TMAl for 15s, then pass in NH 3 , The pressure is 300 mbar, the molar ratio of V / III is 5...

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Abstract

The invention provides an optimization method for a large-power green-light LED epitaxial structure of a Si substrate, and the method comprises the following steps: performing the Si substrate processing, depositing an AlN buffer layer on the Si substrate, and then sequentially growing an N-GaN layer, a low-temperature GaN layer, a 10-cycle InGaN/GaN superlattice layer, an electron injection layer, a 6-cycle InGaN/GaN blue MQW layer, a 7-cycle InGaN/GaN green-light MQW layer, a P-AlGaN electron blocking layer and a P-GaN layer, and continuing to grow a highly-Mg-doped P-GaN layer; then performing cooling to 710-730 DEG C, performing annealing for 30 to 60 minutes, and then performing the furnace cooling to obtain the large-power green-light LED epitaxial structure of the Si substrate in anoptimized design. The method can optimize the N-type layer doping, the thickness of the low-temperature GaN layer in the intercalation layer, the InGaN/GaN superlattice layer In component and the blue multi-quantum well structure well thickness, so that the electrons can be cooled at a large current working density, thereby reducing carrier leakage, reducing a polarization electric field in a quantum well, effectively alleviating the quantum efficiency degradation and improving the luminous efficiency of a device.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronics, and in particular relates to a method for optimizing the epitaxial structure of a Si substrate high-power green LED. Background technique [0002] From the perspective of saving energy and improving the color quality of the light source, the white light lighting method based on three primary colors (red, green, blue) light-emitting diodes is undoubtedly the best choice. Over the years, the luminous efficiency of purple and blue LEDs has developed rapidly. The external quantum efficiency of AlGaInN blue LEDs has exceeded 80%. However, the development of green LEDs is not satisfactory, and the external quantum efficiency of AlGaInN green LEDs is not enough. 40%. At present, some effective measures have been proposed to improve the quantum efficiency of green LEDs, mainly including reducing the defect density in the epitaxial layer and adopting a new thick InGaN quantum well layer compo...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/02H01L33/06H01L33/30
Inventor 白俊春周小伟景文甲李培咸平加峰
Owner 江苏晶曌半导体有限公司
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