Raman enhancing structure based on external cavity resonance

A technology of enhancing structure and external cavity resonance, which is applied in the direction of Raman scattering, measuring devices, instruments, etc., can solve the problems of large Raman intensity enhancement, laser power drop, and affecting Raman intensity, etc., to achieve wavelength tunable Effect

Pending Publication Date: 2019-04-02
苏州朝光光电有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the laser incidence direction of the common intracavity enhancement method is either obliquely incident into the cavity. If the laser is incident from outside the gas cavity into the cavity, then it must be ensured that the incident light is incident into the gas cavity at a certain angle, resulting in the laser in the cavity. The number of reflections within is limited by this angle, which affects the Raman intensity
Or a hole is made on one of the optical components as the entrance of the laser, the purpose is to let the Raman laser enter the cavity, which makes the system complex and expensive, and the number of resonances of the laser in the cavity is limited Or as the number of reflections increases, the power of the laser drops rapidly, and the energy of the laser gradually decreases. The final result is that the magnitude of Raman enhancement is greatly limited.
Existing methods are difficult to achieve greater Raman intensity enhancement. The main reason for this problem is that the Raman laser is separated from the gas cavity.

Method used

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  • Raman enhancing structure based on external cavity resonance
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Examples

Experimental program
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Effect test

Embodiment 1

[0020] Embodiment one: if figure 1 As shown, the Littrow intracavity enhancement structure: the laser light emitted by the semiconductor laser 1 is focused on the center of the gas chamber (quartz gas container) 3 by the first focusing lens 2, and the focused beam is collimated by the first collimating lens 4 and projected on the blazed grating On 5, because the diffraction efficiency of the blazed grating is extremely high, close to 100%, there is almost no zero-order output of the blazed grating, and the -1-order diffracted beam returns along the original path of the incident light, and is focused on the air chamber again after passing through the first lens In the above, after the focused beam passes through the first focusing lens 2, it re-enters the interior of the semiconductor laser to form a mode competition in the laser cavity. Since the mode competition of the semiconductor laser can enable the semiconductor laser to output a single longitudinal mode, further, the si...

Embodiment 2

[0022] Embodiment two: if figure 2 As shown, the Littman intracavity enhancement structure: the laser light emitted by the semiconductor laser 1 is collimated by the third collimating lens 22 and then irradiated on the grating 5. Since the -1 order diffraction efficiency of the grating is extremely high, close to 100%, there is almost no zero First-order reflected light and -1-order diffracted light pass through the third focusing lens 23, the focus of the third focusing lens is located in the air chamber 3, and the focused light beam enters the right-angle prism 10 after being collimated by the fourth collimating lens 24, adjusting the right-angle right-angle The angle of the prism, due to the total reflection of the right-angle prism, the reflected light returns to the cavity of the semiconductor laser according to the original optical path to participate in the mode competition. Since the mode competition of the semiconductor laser can enable the semiconductor laser to out...

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Abstract

The invention discloses a Raman enhancing structure based on external cavity resonance. The Raman enhancing structure based on external cavity resonance is divided into a Littrow cavity enhancing structure and a Littman cavity enhancing structure. A gas chamber is placed in a resonance cavity of a laser, that is the gas chamber is placed in an external cavity of an external cavity feedback type semiconductor laser, so that the laser and the gas chamber are combined, the problem that the excitation frequency is reduced due to the fact that the laser is obliquely injected into the gas cavity isavoided, and the problem that the system is more complicated and expensive to be punched in the optical element is avoided. In addition, according to the Raman system adopting the structure, the single-longitudinal mode output of the Raman laser and the tunable wavelength can be realized, and the detection of the multi-wavelength Raman spectrum can be realized.

Description

technical field [0001] The invention relates to a Raman enhanced structure based on external cavity resonance. Background technique [0002] Raman spectroscopy can identify substances at the molecular level and provide molecular "fingerprint" spectral information. And it requires minimal sample preparation, allowing rapid on-site testing. Even if the sample to be tested is placed in a container such as a packaging bag or a glass bottle, it can be detected conveniently. It can detect solids, solutions, and gases. It has a wide range of applications, whether it is in the field of food, drug testing, or environmental monitoring. Raman spectrometers have played an important role. [0003] So far, Raman spectroscopy detection technology has been widely used in food safety, biomedicine, archaeology, public security and other fields, and it is of great value for qualitative analysis, quantitative analysis and molecular structure analysis of substances. However, the signal of Ram...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65G01N21/01
CPCG01N21/658G01N21/01
Inventor 蔡志坚周红武
Owner 苏州朝光光电有限公司
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