A nanowire detector based on quantum dot decoration

Abstract

The invention relates to a GaAs nanowire detector based on quantum dot modification and a preparation method of the detector. The method is to use Sb 2 S 3 Quantum dot modification adopts (NH 4 ) 2 The treated GaAs nanowires were passivated with S passivation solution, then treated with this sulfur passivation and coated with Sb 2 S 3 GaAs nanowires of quantum dots are used for the fabrication of detector devices. The surface sulfur passivation treatment of GaAs nanowires reduces the surface state density of GaAs nanowires, improves the lifetime of carriers in the detector, and then improves the responsivity of GaAs nanowire detectors, and coats GaAs nanowires with quantum dots This makes the quantum dots and GaAs nanowire materials form a type II energy band structure, and the photocarriers of the quantum dots are injected into the GaAs nanowires under the light, which improves the responsivity of the GaAs nanowire detector device and prevents the passivation layer from being damaged. Oxidation again, thereby improving the detection performance of the GaAs nanowire detector, and solving the problem of poor responsivity of the existing GaAs nanowire detector device.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and in particular relates to a high-responsivity near-infrared photodetector based on quantum dot modification and a preparation method of the detector. Background technique [0002] Photodetectors are widely used in various fields such as industry, medical treatment, civilian use, aerospace, national defense and military affairs. As a typical representative of the third-generation semiconductor materials, GaAs has the characteristics of direct band gap and high carrier mobility, and has been widely used in the fields of near-infrared lasers and high-frequency devices. The reduction of the dimensions of semiconductor materials and the reduction of the structural feature scale will cause obvious quantum size effects, surface effects, and macroscopic quantum tunneling effects. For example: in the one-dimensional semiconductor nanowire material, the nanowire reaches the nanometer...

AI Technical Summary

Problems solved by technology

[0004] The present invention proposes a nanowire detector based on quantum dot modification and a method for preparing the detector. The detector proposed by the present invention has high responsivity. The method for preparing the detector proposed by the present invention starts from Starting from the perspective of materials and devices, it overcomes the problems of complex structure, high process difficulty and poor long-term stability of traditional processing methods

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