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Sic material and sic composite material

A technology of multi-layer composite materials and diffraction intensity, which is applied in the direction of polycrystalline material growth, metal material coating technology, carbon compounds, etc., can solve the problems of SiC material product stability reduction, etc., to improve economy and productivity, increase The effect of longevity

Active Publication Date: 2019-04-02
トカイカーボンコリアカンパニーリミティド
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Due to these different etching amounts, the product stability of the SiC material is lowered, and the frequent replacement of the SiC material becomes the cause of the increase in the manufacturing cost of the semiconductor, etc.

Method used

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  • Sic material and sic composite material
  • Sic material and sic composite material
  • Sic material and sic composite material

Examples

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Embodiment Construction

[0037] Hereinafter, examples of the present invention will be described in detail. In describing the present invention, if it is judged that the specific description of related known functions or configurations unnecessarily obscures the gist of the present invention, the detailed description will be omitted. In addition, the terms used in the present invention may be different according to the user's intention, the operator's intention, or the practice of the field to which the present invention belongs, as terms used to appropriately express the preferred embodiments of the present invention. In the specification, the definitions of these terms are based on the entire contents of the specification.

[0038] The present invention relates to a SiC (silicon carbide) material that grows 111 planes in the preferential crystal growth direction of the plasma-exposed surface, and can form a surface with improved stability to a plasma environment and a uniform etching amount.

[003...

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Abstract

The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide a SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I) = (peak intensity of plane (200) + peak intensity of plane (220)) / peak intensity ofplane (111).

Description

technical field [0001] The present invention relates to SiC materials and SiC composite materials utilizing the same. Background technique [0002] Generally, when the carbon material used in the existing semiconductor process is directly used in the susceptor, focus ring, electrode, etc. used in semiconductor manufacturing equipment, there is a problem of foreign matter being generated in the carbon material. [0003] In view of such problems, a method of coating SiC or TaC on the surface of a carbon material structure is utilized. [0004] Although SiC has high heat resistance and chemical resistance and high physical strength, it has a high possibility of utilization. However, SiC used in the semiconductor field undergoes surface etching in a plasma environment. After these plasma etching, SiC crystallization Directions show different etch amounts. Due to these different etching amounts, the product stability of the SiC material decreases, and the frequent replacement o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/956
CPCC01P2002/70C01B32/956C30B29/36C30B25/20C01B32/984H01L21/3213C01P2004/84C01P2002/74C23C16/325
Inventor 金桢一
Owner トカイカーボンコリアカンパニーリミティド
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