Semiconductor device and method of forming the same

Abstract

A semiconductor device and a method for forming the same, wherein the method includes: providing a semiconductor substrate with fins on the semiconductor substrate; performing a patterning process, and forming a flat layer on the semiconductor substrate and the fins during the patterning process ; The planarization layer is removed by neutral particle beam etching process. The method improves the performance of semiconductor devices.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) i...

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices composed of fin field effect transistors in the prior art still needs to be improved

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