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g-C3N4 photocatalyst with marginal nitrogen vacancy and preparation method thereof

A photocatalyst, g-c3n4 technology, applied in chemical instruments and methods, physical/chemical process catalysts, nitrogen compounds, etc., can solve the problems of large π bond destruction, destruction of conjugated structure, lack of, etc., to improve catalytic performance, Mild reaction conditions and improved separation efficiency

Active Publication Date: 2019-04-12
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional preparation methods mostly use conventional atmospheres such as air or argon, hydrogen, etc., and the prepared materials either lack the necessary defect sites for catalytic reactions (under air, argon atmosphere) or the defect sites are mainly located in the scar of the material. Oxygen ring (under a hydrogen atmosphere), and the defect site on the phosphazine ring will destroy the conjugated structure of the material, resulting in the destruction of the large π bond of the material
[0004] In summary, the existing technology lacks an effective route to create more catalytically efficient g-C 3 N 4 defect sites, therefore, developing an efficient preparation method to prepare g-C with new defect sites 3 N 4 of great scientific and engineering significance

Method used

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  • g-C3N4 photocatalyst with marginal nitrogen vacancy and preparation method thereof
  • g-C3N4 photocatalyst with marginal nitrogen vacancy and preparation method thereof
  • g-C3N4 photocatalyst with marginal nitrogen vacancy and preparation method thereof

Examples

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Effect test

Embodiment 1

[0038] A marginal nitrogen vacancy g-C 3 N 4 The preparation method of photocatalyst comprises the steps:

[0039] (1) Put 5g of melamine powder into the porcelain boat, then put the porcelain boat into the quartz tube;

[0040] (2) Put the quartz tube into the tube furnace, and then in 100sccmAr / CCl 4 In the atmosphere, react at 550°C for 4h;

[0041] (3) Stir and wash the obtained product in deionized water for 30 minutes to remove impurities, and dry at 50° for 4 hours to obtain the marginal nitrogen vacancy g-C 3 N 4 .

[0042] figure 1 g-C prepared for this example 3 N 4 It can be seen from the figure that the prepared product has strong visible light absorption (the absorption band edge extends to about 450nm), and has a slope-shaped tailing absorption at about 500nm, which is caused by defects. The resulting impurity energy bands indicate the successful preparation of defects.

[0043] figure 2 g-C prepared for this example 3 N 4 From the SEM picture, it c...

Embodiment 2

[0049] a g-C 3 N 4 A marginal nitrogen vacancy and a preparation method thereof, comprising the steps of:

[0050] (1) Put 3g of melamine powder into the porcelain boat, and then put the porcelain boat into the quartz tube.

[0051] (2) The quartz tube is put into a tube furnace, and then heated at 150sccmAr / CCl 4 The reaction was carried out at 550°C for 4h.

[0052] (3) The obtained product was stirred and washed in deionized water for 60 minutes to remove impurities, and dried at 30° for 5 hours to obtain the marginal nitrogen vacancy g-C 3 N 4 .

Embodiment 3

[0054] a g-C 3 N 4 A marginal nitrogen vacancy and a preparation method thereof, comprising the steps of:

[0055] (1) Put 10g of melamine powder into the porcelain boat, and then put the porcelain boat into the quartz tube.

[0056] (2) The quartz tube is put into a tube furnace, and then heated at 50sccmAr / CCl 4 The reaction was carried out at 700°C for 1 h.

[0057] (3) Stir and wash the obtained product in deionized water for 2 hours to remove impurities, and dry it at 100° for 1 hour to obtain the marginal nitrogen vacancy g-C 3 N 4 .

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Abstract

The invention belongs to the technical field of preparation of graphite-like phase carbon nitride, in particular to a g-C3N4 photocatalyst with a marginal nitrogen vacancy and a preparation method thereof. The method comprises the following steps: (1) placing melamine or dicyandiamide into a quartz tube, then introducing an Ar / CCl4 mixed gas, and conducting reaction at a set temperature; and (2) after the reaction is completed, washing off impurities on a product by water, and conducting drying, so as to obtain the g-C3N4 catalyst with the marginal vacancy. According to the invention, the defect concentration can be regulated and controlled l by adjusting the reaction conditions, further the light absorption and catalytic activities of the material can be regulated and controlled, and therefore the control means is simple and easy to control; and the preparation method of the invention can prepare the g-C3N4 photocatalyst with the marginal nitrogen vacancy, and greatly improves the g-C3N4 photocatalytic performance.

Description

technical field [0001] The invention belongs to the technical field of preparing graphite-like carbon nitride, in particular to a marginal nitrogen vacancy g-C 3 N 4 Photocatalyst and its preparation method. Background technique [0002] At present, energy and environmental issues have become two major problems faced by human beings. Solar energy has a series of advantages such as abundant reserves, low price, and environmental protection. As an inexhaustible new energy source, solar energy has gradually attracted widespread attention from people. In recent years, various high and new technologies based on solar energy utilization have attracted extensive attention of researchers from all over the world. Photocatalytic technology is a new technology that effectively utilizes solar energy resources and converts them into chemical energy. It can decompose water into hydrogen and oxygen, and solve energy and environmental related problems. However, the promotion of photocat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/082B01J27/24
CPCC01B21/0605B01J27/24C01P2002/85C01P2004/03B01J35/39
Inventor 秦晓燕李慧亮黄柏标王泽岩张晓阳郑昭科王朋刘媛媛张倩倩
Owner SHANDONG UNIV
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