Metal grid structure and manufacturing method thereof
A technology of metal gates and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as electrode metal diffusion
Active Publication Date: 2021-06-15
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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- Claims
- Application Information
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Problems solved by technology
[0007] The purpose of the present invention is to overcome the above-mentioned defects in the prior art, and provide a metal gate structure and its manufacturing method to solve the problem of electrode metal diffusion
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[0033] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0034] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.
[0035] In the following specific embodiments of the present invention, please refer to figure 2 , figure 2 It is a schematic diagram of a metal gate structure in a preferred embodiment of the present invention. Such as figure 2 As shown, a metal gate structure of the present invention can be disposed on a silicon substrate (not shown), for exam...
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Abstract
The invention discloses a metal grid structure, which comprises from inside to outside: a metal electrode layer, a bonding layer surrounding the metal electrode layer, a first diffusion barrier layer and a work function layer, and a second diffusion barrier layer arranged inside the first diffusion barrier layer. Diffusion barrier layer, the second diffusion barrier layer is a compound barrier layer structure including a metal layer and a metal oxide layer inside the metal layer. The present invention also discloses a method for manufacturing a metal gate structure, comprising: depositing and forming a work function layer in the substrate trench through a conventional metal gate process; forming a first diffusion barrier layer on the work function layer ; On the first diffusion barrier layer, a metal layer is formed by deposition; on the surface of the metal layer, a metal oxide layer is formed to form a second diffusion barrier layer; on the second diffusion barrier layer, a bonding layer is formed by deposition; On top of the junction layer, a metal electrode layer material is deposited to form a metal gate. The invention effectively solves the problem of electrode metal diffusion.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing technology, and more particularly, to a metal gate structure capable of controlling metal diffusion and a manufacturing method thereof. Background technique [0002] Metal-oxide-semiconductor field effect transistor (MOSFET) is the most important device structure in integrated circuits at present. With the reduction of device size, more and more new processes are introduced into the production process of devices. [0003] At the 32nm process node, Intel (Intel) first introduced a metal gate process to replace the original polysilicon gate process. Compared with the polysilicon gate, the metal gate resistance is smaller, which improves the signal transmission speed, and the metal gate does not have the polysilicon depletion phenomenon of the polysilicon gate, which is beneficial to reduce the MOS capacitance of the device and improve the performance of the device. [0004...
Claims
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IPC IPC(8): H01L29/49H01L21/28
CPCH01L29/4966H01L21/28088H01L29/66545H01L21/28568H01L29/401H01L29/4236
Inventor 刘晓钰
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT