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Organic semiconductor device without electron transport layer and preparation method of organic semiconductor device

An organic semiconductor, electron transport layer technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the adverse effects of transport layer material stability and device performance, complicate device manufacturing process, and device stability. Disadvantages and other problems, to achieve the effect of prolonging life, improving yield, and increasing open circuit voltage

Inactive Publication Date: 2019-04-12
顾琼
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these transport layers also bring a series of problems: First, the device manufacturing process is greatly complicated, and the complex device structure will reduce the yield rate; second, the transport layer materials are expensive, far exceeding the electrode and functional layer. The price of the material; again, the stability of the transport layer material itself will also adversely affect the device performance
In short, although the appearance of the transport layer has improved the performance of the device, it has also brought adverse effects on many aspects such as the device preparation process, device cost, and device stability.

Method used

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  • Organic semiconductor device without electron transport layer and preparation method of organic semiconductor device
  • Organic semiconductor device without electron transport layer and preparation method of organic semiconductor device
  • Organic semiconductor device without electron transport layer and preparation method of organic semiconductor device

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preparation example Construction

[0030] A method for preparing an organic semiconductor device without an electron transport layer as described above, comprising the following steps:

[0031] S1: Preparation of thin films of organic materials

[0032] Taking transparent ITO glass as a substrate, uniformly prepare a layer of organic material thin film on its surface to obtain a substrate covered with organic material thin film;

[0033] S2: Preparation of metallic Ti film

[0034] Taking the substrate covered with an organic material thin film prepared in step S1, depositing a metal Ti thin film on the surface of the organic material thin film by thermal evaporation, magnetron sputtering or electroplating to obtain a substrate covered with a metal Ti thin film and an organic material thin film, said The thickness of the metal Ti film is not more than 30nm;

[0035] S3: Preparation of metal electrode film

[0036] Take the substrate covered with the metal Ti film and the organic material film obtained in the...

Embodiment 1

[0038] A method for preparing an organic semiconductor device without an electron transport layer, comprising the following steps:

[0039] S1: Preparation of thin films of organic materials

[0040] Get transparent ITO glass as substrate material, uniformly prepare one deck hole transport layer and organic light-emitting layer thin film on its surface, obtain the substrate that covers organic material thin film;

[0041] S2: Preparation of metallic Ti film

[0042] Get the substrate prepared in step S1, and deposit a 2nm thick metal Ti film on the surface of the organic material film by thermal evaporation to obtain a substrate covered with a metal Ti film and an organic material film;

[0043] S3: Preparation of metal electrode film

[0044] Get the substrate covered with the metal Ti film and the organic material film obtained in the above step S2, and deposit a metal Au electrode film with a thickness of 80nm on the surface of the metal Ti film by magnetron sputtering te...

Embodiment 2

[0046] A method for preparing an organic semiconductor device without an electron transport layer, comprising the following steps:

[0047] S1: Preparation of thin films of organic materials

[0048] Take transparent ITO glass as the substrate material, uniformly prepare a layer of PTAA organic conductive layer and methylamine lead iodine photosensitive layer film on its surface, and obtain the substrate covered with organic-inorganic hybrid material film;

[0049] S2: Preparation of metallic Ti film

[0050] Get the substrate prepared in step S1, and deposit a 15nm thick metal Ti film on the surface of the organic-inorganic material film by electroplating to obtain a substrate covered with a metal Ti film and an organic-inorganic hybrid material film;

[0051] S3: Preparation of metal electrode film

[0052] Get the substrate that above-mentioned step S2 makes, by thermal evaporation technology, deposit the metal Ag electrode film that thickness is 100nm on the surface of m...

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Abstract

The invention relates to an organic semiconductor device without an electron transport layer and a preparation method of the organic semiconductor device; a device comprises a transparent substrate, an organic material thin film, a metal Ti thin film and a metal electrode thin film from the bottom up in sequence; the preparation method comprises the following steps of firstly, preparing a layer oforganic material thin film on the surface of the transparent substrate, and then adopting a method of heat evaporation, electroplating or magnetron sputtering, preparing a metal Ti thin film on the surface of the organic material thin film, and finally, covering a layer of metal electrode material on the surface of the Ti thin film, so as to obtain the organic semiconductor device without the electron transport layer. By adopting the device without the electron transport layer structure, the thin film preparation process can be greatly simplified, and the use of part of materials is avoided,so that the process link for simplifying the preparation of the device is realized, the yield of the device is improved, and the manufacturing cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an organic semiconductor device without an electron transport layer and a preparation method thereof. Background technique [0002] With the rise of new semiconductor devices such as organic photovoltaic cells, light-emitting diodes, and detectors, new organic materials and devices emerge in an endless stream, especially in organic light-emitting diodes (OLEDs), flexible wearable electronic devices, etc., which have great application prospects. Its related fields have also received extensive attention. At present, organic devices generally have a typical "sandwich structure". Taking trans-type devices as an example, they have a structure of "conductive glass / hole transport layer / organic functional layer / electron transport layer / metal electrode". In actual production, the carrier transport layer is composed of multiple layers of organic or inorganic materials. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K71/16H10K50/14H10K50/805H10K50/84
Inventor 毛秀芬顾琼王莹邓大庆
Owner 顾琼
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