Crimp connection type IGBT internal package structure

Abstract

The invention provides a crimp connection type IGBT internal package structure encapsulated in a ceramic tube casing. The structure comprises an IGBT/FRD chip and silicon carbide aluminum layers. Thesilicon carbide aluminum layers are located on the upper and lower sides of the IGBT/FRD chip. A soldering layer is arranged between the IGBT/FRD chip and each of the silicon carbide aluminum layers,and the upper and lower surfaces of the IGBT/FRD chip are provided with metal layers. The invention provides a silicon carbide aluminum-soldering layer-IGBT/FRD chip-welding layer-silicon carbide aluminum internal structure of a ceramic shell packaged crimp connection type IGBT, so the packaging process operation of the ceramic shell packaged crimp connection type IGBT is greatly simplified; double-sided heat dissipation of the crimp connection type IGBT is ensured; and requirement of high current flow and high reliability are met.

Description

technical field [0001] The invention belongs to the technical field of IGBT package structure, and in particular relates to a crimping type IGBT internal package structure capable of being packaged in a ceramic tube case. Background technique [0002] IGBT is a composite device of MOSFET and bipolar transistor. It not only has the characteristics of easy driving of MOSFET, but also has the characteristics of high voltage and high current of power transistor. It is recognized by the world as a representative product of the third technological revolution of power electronics. [0003] Compared with the soldered IGBT, the press-fit IGBT has the advantages of double-sided heat dissipation, wider safe operating area (SOA), higher operating junction temperature, no leads, high reliability, and special characteristics of short-circuit failure. In flexible DC The devices in the power transmission converter valve have a very significant competitive advantage in the application fields...

AI Technical Summary

Problems solved by technology

Among them, molybdenum sheet-IGBT / FRD chip-molybdenum sheet structure, molybdenum sheet-IGBT / FRD chip-molybdenum sheet-silver sheet structure, pressure-connected IGBT devices have more assembly components, and the thickness of the chip and silver sheet is relatively thin. Brittle, the material of the silver sheet is soft, it is difficult to achieve mutual positioning, the packaging process is more complicated, and the loss rate of the chip during the assembly process is relatively large

The molybdenum sheet-silver sintered layer-IGBT / FRD chip-molybdenum sheet-silver sheet structure first uses nano-silver solder to realize the sintering and fixing of the chip collector and the molybdenum sheet, and introduces the silver sintered layer as a pressure-bonding buffer layer, which is better than molybdenum sheet-IGBT / FRD chip-molybdenum sheet structure, molybdenum sheet-IGBT / FRD chip-molybdenum sheet-silver sheet structure have greatly improved the ease of assembly and chip loss rate, but the molybdenum sheet-silver sheet structure on the side of the emitter It has not changed, and there are also problems that mutual positioning is difficult to achieve, and the packaging process is more complicated.

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