Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as large dark current of germanium detectors, and achieve good performance, low dark current, and good strength
Active Publication Date: 2021-03-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0004] The main purpose of this application is to provide a semiconductor device and its manufacturing method to solve the problem of relatively large dark current of germanium detectors in the prior art
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[0054] The semiconductor device is a photodetector, and its fabrication process is formed by at least the following steps:
[0055] First, form the first structure to be bonded 01, the specific process is as follows:
[0056] A first dielectric layer 20 and a waveguide layer 30 are sequentially arranged on the surface of the first substrate 10;
[0057] Etching the waveguide layer 30 to form a plurality of grating parts 31 arranged along the first direction, such as figure 1 As shown, the second dielectric layer 40 is set on the waveguide layer 30 to form figure 1 In the structure shown, the first substrate 10 is a silicon substrate, the first dielectric layer 20 and the second dielectric layer 40 are silicon dioxide layers, and the waveguide layer 30 is a silicon layer.
[0058] Secondly, the second structure to be bonded 02 is formed, and the specific process includes:
[0059] formed as figure 2 The GOI structure in the GOI structure, and the second pre-detection layer...
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Abstract
The application provides a semiconductor device and a manufacturing method thereof. The manufacturing method includes: sequentially arranging a first dielectric layer, a waveguide layer and a second dielectric layer on the surface of a first substrate to form a first structure to be bonded; forming a The pre-detection structure of the second pre-detection layer, the second pre-detection layer includes the first substructure layer and the second substructure layer stacked in sequence along the direction away from the second substrate or the second pre-detection layer includes the second substructure Layer, the growth temperature of the second substructure layer is greater than the growth temperature of the first substructure layer; the third dielectric layer is set on the surface of the second substructure layer to form the second structure to be bonded, the second dielectric layer and the third The material of the medium layer is the same; the first structure to be bonded and the second structure to be bonded are bonded to form a bonded structure; at least the second substrate is removed, and only the second substructure layer remains in the pre-detection structure. The dark current in the detector prepared by the manufacturing method is small.
Description
technical field [0001] The present application relates to the field of semiconductors, and in particular, to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the prior art, germanium detectors are widely used in various fields. In conventional germanium detectors, the germanium layer is directly grown on the substrate silicon layer. However, silicon and germanium have a lattice mismatch of 4.2%, which makes Defects are more likely to occur when germanium is grown on silicon, and the growth process of germanium generally includes: first growing at a low temperature between 300°C and 450°C, and then growing at a high temperature between 600°C and 1000°C. Such a growth method causes many defects to be generated during low-temperature growth, and the dark current of the germanium detector is relatively large, which affects the performance of the detector. [0003] The above information disclosed in the Background section is only to enh...
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IPC IPC(8): H01L21/18H01L31/105
CPCH01L21/187H01L31/105
Inventor 李彬李志华唐波张鹏王桂磊杨妍刘若男
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI