Electrically pumped perovskite composite cavity laser

A perovskite and compound cavity technology, applied in the field of electrically pumped perovskite compound cavity lasers, can solve problems such as defect increase, loss, damage, etc., and achieve the effects of simple structure, improved efficiency, and easy implementation.

Active Publication Date: 2021-01-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, direct etching of the active layer will introduce damage, resulting in increased defects and loss; and the existing gear-shaped resonant cavity structure cannot be applied to active materials that are difficult to use conventional etching methods or imprinting techniques. perovskite materials

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  • Electrically pumped perovskite composite cavity laser
  • Electrically pumped perovskite composite cavity laser
  • Electrically pumped perovskite composite cavity laser

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Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. the embodiment. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protect...

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Abstract

The invention provides an electric pumping perovskite composite cavity laser, and belongs to the field of quantum dot lasers. The electric pumping perovskite composite cavity laser comprises light-emitting units and insulating micro discs; each light-emitting unit sequentially comprises an N-shaped electrode, an electronic transmission layer, a perovskite quantum dot layer, an electron hole transmission layer and a P-shaped electrode from top to bottom; each insulating micro disc comprises a disc and a lateral grating; the insulating micro discs are embedded between the light-emitting units; and the equivalent refractive index of the insulating micro discs are different from the equivalent refractive index of the light-emitting units. According to the electric pumping perovskite compositecavity laser, by additionally arranging the insulating micro discs with the lateral gratings, echo wall mode resonance is formed between the light-emitting units and the insulating micro discs, and the efficiency of the perovskite laser outer quantum is greatly improved.

Description

technical field [0001] The invention relates to the field of quantum dot lasers, in particular to an electrically pumped perovskite composite cavity laser. Background technique [0002] Perovskite materials have the same chemical structure: ABX3. Wherein A is a monovalent cation, B is a divalent metal cation, and X is a halogen element or a mixture of halogen elements. As an emerging optoelectronic active material, perovskite materials have been widely used in optoelectronic fields and have made rapid progress, such as photovoltaic solar cells, photodetectors, field-effect transistors and LEDs. Perovskite materials have superior optoelectronic properties, including high absorption coefficient, high optical pump quantum efficiency, long diffusion length, and high mobility. [0003] In addition, the preparation method of perovskite is simple. Compared with other quantum dots such as CdSe, the cost is low. The emission wavelength can cover the entire visible spectrum and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/20H01S5/34H01S5/042
CPCH01S5/042H01S5/20H01S5/34
Inventor 郑婉华刘志爽王宇飞
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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