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Compound and organic photoelectric device, image sensor and electronic device including the same

A technology of compounds and chemical formulas, which can be used in electric solid devices, silicon organic compounds, germanium organic compounds, etc., and can solve the problems of small absorption area and deterioration of sensitivity.

Pending Publication Date: 2019-04-30
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, silicon photodiode is widely used, but it has deteriorated sensitivity because it has small absorption area due to small pixels

Method used

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  • Compound and organic photoelectric device, image sensor and electronic device including the same
  • Compound and organic photoelectric device, image sensor and electronic device including the same
  • Compound and organic photoelectric device, image sensor and electronic device including the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0459] Synthesis Example 1: Compound (2-((5-(10H-phenoselenazin-10-yl)tellphen-2-yl)methylene)-1H-indene-1,3 represented by Chemical Formula 1-1 (2H)-Diketone) Synthesis

[0460] [chemical formula 1-1]

[0461]

[0462] [Reaction Scheme 1-1]

[0463]

[0464] (i) Synthesis of compound (1)

[0465] Synthesized with reference to methods disclosed in Efficient Synthesis of 2-Iodo and 2-Dicyanomethyl Derivatives of Thiophene, Selenophene, Tellurophene and Thieno[3,2-b]thiophene, Takahashi, K.; Tarutani, S.Heterocycles 1996,43,1927-1935 2-Iodotellphene.

[0466] (ii) Synthesis of compound (2)

[0467] 10.0g (32.7mmol) of 2-iodotellphene and 6.17g (25.2mmol) of 10H-phenoselenazine in 100ml of anhydrous toluene in 5 mol% of Pd (dba) 2 , 5 mol% P(tBu) 3 , and 2.66 g (27.7 mmol) of NaOtBu were heated and refluxed. The product therefrom was isolated and purified by silica gel column chromatography (toluene:hexane in a volume ratio of 1:4) to obtain 4.25 g of 10-(tellphen-2-...

Embodiment 2 to 7

[0650] Examples 2 to 7: Fabrication of Optoelectronic Devices

[0651] Photoelectric devices according to Examples 2 to 7 were manufactured according to the same method as in Example 1, except that the compounds according to Synthesis Examples 2 to 7 were used instead of the compounds according to Synthesis Example 1, respectively.

[0652] Reference Examples 1 to 5: Fabrication of Optoelectronic Devices

[0653] Photoelectric devices according to Reference Examples 1 to 5 were manufactured according to the same method as in Example 1, except that the compounds according to Synthesis Reference Examples 1 to 5 were used instead of the compounds according to Synthesis Example 1, respectively.

[0654] Evaluation 3: Light Absorption Characteristics of Optoelectronic Devices

[0655] The photoelectric devices according to Examples 1 to 7 and Reference Examples 1 to 5 were evaluated for light absorption characteristics in the ultraviolet-visible (UV-Vis) region using a Cary 5000...

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Abstract

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as definedin the detailed description.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2017-0136882 filed with the Korean Intellectual Property Office on October 20, 2017, the entire contents of which are incorporated herein by reference. technical field [0003] Example embodiments relate to compounds and optoelectronic devices, image sensors, and electronic devices including the same. Background technique [0004] A photoelectric device converts light into an electrical signal using the photoelectric effect, it may include a photodiode, a phototransistor, etc., and it may be applied to an image sensor, a solar cell, a light emitting device, and the like. [0005] Image sensors including photodiodes can have high resolution and thus small pixels. At present, a silicon photodiode is widely used, but it has deteriorated sensitivity because it has a small absorption area due to small pixels. Therefore, organic materials capable of rep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D421/04C07D421/14C07D471/04C07D471/14C07F7/08C07F7/30H01L51/46H01L27/30
CPCC07D421/04C07D421/14C07D471/04C07D471/14C07F7/0816C07F7/30H10K39/32H10K85/615H10K85/622H10K85/649H10K85/657H10K85/40H10K85/6572C09K11/06C09K2211/1011C09K2211/1029C09K2211/1096Y02E10/549C07D265/38C07D279/18H01L27/14621H10K30/00
Inventor 申智琇崔容硕柴田胜则崔泰溱尹晟荣权五逵金相模涩谷宽政李启滉陈勇完崔惠成白铁洪慧林
Owner SAMSUNG ELECTRONICS CO LTD