Semiconductor device and manufacturing method thereof
A device manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as output signal distortion and distortion, and achieve the effect of improving linearity
Active Publication Date: 2020-06-16
SUZHOU HAN HUA SEMICON CO LTD
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- Description
- Claims
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Problems solved by technology
When the dynamic range of the input signal expands, the static operating point of the GaN HEMT device is affected, which causes the amplitude and phase transmission characteristics of the device to change, causing distortion and distortion to the output signal, that is, linearity problems
Method used
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[0024] The semiconductor device and its manufacturing method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0025] In the present invention, in "a layer formed on another layer", it may mean that a layer is formed on another layer, but not necessarily that the layer is in direct physical or electrical contact with another layer (for example, there may be one or more other layers in between). However, in some embodiments, "formed on" may mean that a layer is in direct physical contact with at least a portion of the top surface of another layer.
[0026] Th...
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Abstract
The present application provides a method for fabricating a semiconductor device, comprising: providing a wafer including N semiconductor structures, wherein each semiconductor structure includes a semiconductor layer, and a source and a drain which are on the semiconductor layer; forming a first gate between the source and the drain on the semiconductor structure; forming a first dielectric layeron the wafer, and forming a second gate on the first dielectric layer between the source and the drain of the second semiconductor structure; forming a second dielectric layer on the wafer, and forming a third gate on the second dielectric layer between the source and the drain of the third semiconductor structure; and in the same way, forming an Nth dielectric layer on the water, and an (N+1)thgate on the Nth dielectric layer between the source and the drain of the (N+1)th semiconductor structure, wherein the N is a positive integer greater than 1. The semiconductor device and the method for fabricating the same provided by the present application improve the linearity of the device by forming dielectric layers of different thicknesses in the device.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] The third-generation semiconductor materials represented by gallium nitride (GaN) have excellent characteristics such as wide bandgap, high electron mobility, and high breakdown voltage. Therefore, high electron mobility field effect transistors (HEMT) based on gallium nitride materials It is widely used in the fields of radar, microwave communication and high voltage power devices. With the rapid development of modern wireless communication, various non-constant envelope modulation methods and multi-carrier technology have been widely used. These signals have the characteristics of wide bandwidth and peak-to-average ratio (PAR), so the RF power amplifier circuit for such signals Here, the linearity of the field effect tube has become a very important indicator. If the l...
Claims
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IPC IPC(8): H01L21/335H01L29/778H01L29/423
Inventor 范谦倪贤锋何伟
Owner SUZHOU HAN HUA SEMICON CO LTD