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Semiconductor element and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as affecting the quality of the contact structure of the dielectric layer

Active Publication Date: 2021-11-02
UNITED MICROELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, the capacitor located in the storage area has a larger height, so it has better charge storage efficiency, but at the junction of the storage area and the adjacent peripheral area, due to uneven force or the height difference of the capacitor, etc., May affect the quality of dielectric layers and contact structures formed in the peripheral area

Method used

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  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof

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Embodiment Construction

[0039] In order to enable those who are familiar with the technical field of the present invention to further understand the present invention, the preferred embodiments of the present invention are enumerated below, together with the accompanying drawings, the constitutional content and desired effects of the present invention are described in detail. .

[0040] For the convenience of description, the drawings of the present invention are only schematic diagrams for easier understanding of the present invention, and the detailed proportions thereof can be adjusted according to design requirements. Those skilled in the art should be able to understand the upper and lower relationships of relative elements in the figures described in the text to refer to the relative positions of objects, so they can be turned over to present the same components, which should all be disclosed in this specification The range is described here.

[0041] Please refer to Figure 1 to Figure 6 , w...

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Abstract

The invention discloses a semiconductor element and a manufacturing method thereof. The semiconductor element includes a base, a storage area and a peripheral area are defined in the base, the peripheral area includes at least one transistor, and the storage area includes a plurality of storage units. , each of the memory cells at least includes a gate structure and a capacitor structure, a mask layer located on the capacitor structure in the storage region, and a dielectric layer located on the substrate in the peripheral region, wherein the dielectric layer A top surface of the electrical layer is aligned with a top surface of the mask layer.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a method for solving the problem of the recess generated in the dielectric layer of the peripheral region of the semiconductor element during the planarization process and improving the yield of the semiconductor element. Background technique [0002] Dynamic random access memory (DRAM for short hereinafter) is a main volatile memory, and is an indispensable key component in many electronic products. DRAM is composed of a large number of memory cells to form an array area for storing data, and each memory cell is composed of a metal oxide semiconductor (MOS) transistor connected in series with a capacitor. [0003] Wherein, the capacitor is located in the storage area, and there is a peripheral area beside the storage area, and the peripheral area includes other transistor elements and contact structures. Generally speaking, the capacitor located in the storage area has a larger height...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
CPCG11C11/404H10B12/318H10B12/50G11C11/403H10B12/01
Inventor 林文钦陈知远吴学仁吴孟训
Owner UNITED MICROELECTRONICS CORP