A kind of preparation method of molybdenum disulfide film

A molybdenum disulfide thin film technology, which is applied in the field of molybdenum disulfide thin film preparation, can solve the problems of poor film performance, many sulfur vacancies in the film, and difficulty in controlling the disorder of the film, so as to achieve a uniform number of layers, reduce the number of sulfur vacancies, and the number of layers high quality effects

Active Publication Date: 2020-08-28
SOUTH CHINA UNIV OF TECH
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Problems solved by technology

However, magnetron sputtering is rarely used to grow large-area MoS in existing processes. 2 thin film, the main obstacle lies in the difficulty of disorder control during the film deposition process, and the prepared film has more sulfur vacancies, resulting in poor performance of the film

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  • A kind of preparation method of molybdenum disulfide film
  • A kind of preparation method of molybdenum disulfide film
  • A kind of preparation method of molybdenum disulfide film

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preparation example Construction

[0026] refer to figure 1 , the present embodiment discloses a method for preparing a molybdenum disulfide thin film, which comprises the following steps:

[0027] S1. Deposit a layer of molybdenum disulfide thin film on the substrate by magnetron sputtering.

[0028] like figure 2 As shown, the cross-sectional schematic view of the product obtained after step S1, wherein the substrate 101 is a silicon wafer, a buffer layer 102 is formed on the silicon wafer, the buffer layer 102 is silicon dioxide, and the buffer layer 102 is passed through the plasma Enhanced chemical deposition method formation. like image 3 As shown, above the buffer layer 102, a radio frequency power supply 111 is used to magnetron sputter molybdenum disulfide target 112 to deposit a prefabricated molybdenum disulfide film 103. In this embodiment, the purity of the selected molybdenum disulfide target 112 is 99.99%.

[0029] In some other embodiments, the substrate may be glass provided with a buffe...

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Abstract

The invention discloses a preparation method of molybdenum disulfide films. The preparation method of the molybdenum disulfide films comprises the following steps that a layer of the molybdenum disulfide films are deposited on a substrate through magnetron sputtering; the power of magnetron sputtering is 10W-150W; the molybdenum disulfide films are placed into a sealed container for vulcanizationunder a set temperature; and the set temperature is 600 DEG C. According to the preparation method of the molybdenum disulfide films, in the process of film deposition at an earlier stage, the power of a target material is adjusted to effectively realize disordered control in the process of film deposition, the degree of disorder of prefabricated films is reduced, defects of the prefabricated films are reduced, then, the molybdenum disulfide films sputtering in the substrate is placed into the sealed container for vulcanization under the set temperature so as to reduce sulphur vacancy of the prefabricated films, and the crystal quality of the molybdenum disulfide films is improved. According to the preparation method of the molybdenum disulfide films, high-quality molybdenum disulfide films with uniform number of layers can be prepared, and the preparation method of the molybdenum disulfide films can be widely applied to the technical field of film materials.

Description

technical field [0001] The invention relates to the technical field of thin film materials, in particular to a method for preparing a molybdenum disulfide thin film. Background technique [0002] Molybdenum disulfide is a two-dimensional nanomaterial composed of one layer of molybdenum atoms and two layers of sulfur atoms. It has a two-dimensional layered structure similar to graphene, and each layer is stacked to form a block. Each 2D crystal layer is about 0.68nm thick, and the layers are held together by weak van der Waals forces. Molybdenum disulfide is a unique class of layered materials belonging to transition metal chalcogenides, and its bandgap changes from an indirect bandgap semiconductor to a direct bandgap semiconductor with the change of the number of layers. bulk crystalline MoS 2 The bandgap of MoS is 1.2eV, and its electronic transition mode is indirect transition; when the thickness is a single layer, MoS 2 The band gap can reach 1.8eV, and its electronic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58C23C16/40C23C16/50C23C28/04
Inventor 陈荣盛钟伟邓孙斌李国元吴朝晖李斌
Owner SOUTH CHINA UNIV OF TECH
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