MEMS making method of chip-grade atomic clock vapor cell

A chip-level atomic clock and atomic gas chamber technology, applied in the field of atomic clocks, can solve problems affecting the yield of atomic gas chambers, CPT resonance frequency drift, and differences in alkaline atom content, etc.

Inactive Publication Date: 2019-05-21
CHINA JILIANG UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the production of atomic gas chambers, the by-products generated by chemical reactions often adhere to the glass layer or the inner wall of the atomic gas chambers, which will lead to a decrease in the light transmittance of the atomic gas chambers, affecting the CPT effect of basic atoms

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS making method of chip-grade atomic clock vapor cell
  • MEMS making method of chip-grade atomic clock vapor cell
  • MEMS making method of chip-grade atomic clock vapor cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0031] The specific steps of the MEMS manufacturing method of a chip-level atomic clock atomic gas chamber of the present invention are as follows:

[0032] S1: Carry out laser drilling on the crystalline silicon wafer, clean and polish it to form a silicon wafer (1): refer to the attached figure 2 , is a partial schematic diagram of a perforated silicon wafer in a preferred embodiment of the present invention. On a crystalline silicon wafer with a diameter of about 160 mm, a silicon wafer (1) is obtained by drilling holes with a laser. It is necessary to attach figure 2 It is a partial schematic diagram of a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an MEMS making method of a chip-grade atomic clock vapor cell. Through separation of a chemical reaction chamber and a vapor cell chamber, each vapor cell chamber has a corresponding cooling small chamber ceramic cooling plate, thereby realizing uniform distribution of alkali atom content of each produced vapor cell and satisfying a CPT resonance requirement, greatly improving transmittance of the vapor cell and improving finished rate of the vapor cell and strength of a CPT resonance signal. In the MEMS making method, the annealing process to the vapor cell reduce relative frequency drift of a newly manufactured vapor cell per hour from original 10<-7>-10<-8> to 10<-11>-10<-12> so that higher stability and higher reliability are obtained in operation of the ship atomic clock.

Description

technical field [0001] The invention relates to the technical field of atomic clocks, in particular to a MEMS manufacturing method for an atomic gas chamber of a chip-level atomic clock Background technique [0002] Time and frequency references play an important role in a variety of fundamental physics studies and applications in everyday life, including telecommunication network synchronization, secure data transmission, satellite-based inertial navigation, and more. The performance of all these systems is directly related to the fractional frequency stability level of the local clocks they use. Furthermore, with the rapid growth of portable electronic devices and related technologies, these systems require low-cost, low-power, highly miniaturized, and high-performance clocks that can be mass-produced and easily integrated into new instruments and devices. In the past few decades, the development of microelectromechanical systems (MEMS) technology and semiconductor diode ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G04F5/14
Inventor 严永强金怀洲金尚忠徐睿石岩赵天琦袁骁霖周亚东赵春柳
Owner CHINA JILIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products