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Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor electrical performance of semiconductor devices, and achieve the effects of large operating current, improved performance, and reduced contact resistance

Active Publication Date: 2021-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the electrical performance of semiconductor devices in the prior art is poor

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] As described in the context, the prior art formed semiconductor device is poor.

[0032] Method for forming a SRAM device, please refer to figure 1 with figure 2 , figure 2 End figure 1 The cross-sectional view of the cutting line AA includes: providing a semiconductor substrate 100 having an adjacent first fin 110 and a second fin 111 on the semiconductor substrate 100, and a partial side wall and second part of the first fin 110 The isolation layer 101 of the fin 111 partially side wall is formed; the first gate structure 130 across the first fin 110 is formed on the spacer layer; the first fin 110 on the first gate structure 130 forms first The source leakage doping layer 150; forming a second gate structure 140 across the second fin 111 on the spacer layer; a second source drain is formed in the second fin 111 on both sides of the second gate structure 140. Layer 160, the second source drain doping layer 160 and the first source drain doped layer 150 are adjacent.

[00...

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Abstract

A semiconductor device and a method for forming the same, wherein the method includes: providing a semiconductor substrate having adjacent first fins and second fins on the semiconductor substrate, and having a fin covering the first fin on the semiconductor substrate portion and the isolation layer of the sidewall of the second fin part; a first initial doped layer is formed on the first fin; a second initial doped layer is formed on the second fin, and the second initial doped layer and the first The initial doping layer is adjacent; the first initial doping layer and the second initial doping layer are oxidized, so that the first initial doping layer forms a first doping layer and a first oxidation layer located on the surface of the first doping layer layer, making the second initial doped layer form a second doped layer and a second oxide layer on the surface of the second doped layer; removing the first oxide layer and the second oxide layer. The method improves the performance of a semiconductor device.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to a semiconductor device and a method of forming thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developed toward higher component densities and greater integration. The transistor is used as the most basic semiconductor device, which is currently being widely used. The conventional planar transistor has weakened the control capability of the channel current, resulting in a short channel effect, resulting in a leakage current, and ultimately affect the electrical properties of the semiconductor device. [0003] In order to overcome the short channel effect of the transistor, inhibit the leakage current, the prior art proposes a fin field effect transistor (FIN FET), the fin field effect transistor is a common multi-gate device, the structure of the fin field effect transistor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8234H01L27/088H01L21/8244H01L27/11
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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