Air gap type piezoelectric bulk acoustic wave device heterogeneous integration method and a device
A piezoelectric bulk acoustic wave and bulk acoustic wave device technology, applied in electrical components, impedance networks, etc., can solve the problem of high-efficiency heterogeneous integration method of piezoelectric bulk acoustic wave device thin film, CMOS circuit damage process, and unsuitable resonator materials. and other problems, to achieve the effect of short time-consuming, light weight, and low space occupancy during the transfer process and its alignment.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0044] In this embodiment, an intermediate layer with a cavity structure is formed above the CMOS circuit, and then device transfer is performed.
[0045] First, the intermediate layer material is added above the CMOS circuit by conventional methods such as spin coating or deposition; secondly, the cavity structure and the electrode plate window are formed directly through the photolithography process or the photolithography plus etching process, and the electrode plate window exposes the electrode plate ; Finally, transfer the FBAR to the top of the cavity and establish an electrical connection with the CMOS circuit using a transfer printing method. The resulting structure 300 as Figure 4 As shown, it includes: metal conductive film 310 , FBAR device 320 , intermediate layer 330 , cavity structure 340 on the intermediate layer, electrode plate window 350 , electrode plate 360 , CMOS circuit 370 and silicon substrate 380 .
[0046] In this embodiment, the material of the i...
Embodiment 2
[0048] In this example, reliable integration is achieved using UV glue and thermal embossing. The material of the cavity layer is semi-solid UV glue, which can be conveniently pasted on a designated surface, has a plastic shape, and can produce irreversible curing when irradiated by ultraviolet light. The resulting structure is Figure 5 As shown, the structural unit 400 from top to bottom is a metal conductive film 410, an FBAR device 420, a UV adhesive layer 430, a cavity structure 440 on the UV adhesive layer, an electrode plate window 450, an electrode plate 460, a CMOS circuit 470 and silicon Base 480.
[0049] After the UV glue is pasted on the surface of the CMOS circuit, the cavity structure is embossed by hot embossing. The specific method is: cover the UV glue with a light-transmitting hard material with a raised structure, such as glass, and continue to apply a certain pressure and Temperature, and then irradiate with ultraviolet light for a short time, which make...
Embodiment 3
[0052] In this embodiment, the FBAR structure is suspended by establishing a supporting structure, thereby constructing an acoustic reflection interface at the bottom. The support structure and the sacrificial layer were built first, and then the FBAR was transferred on top of the support structure to form a structure as shown in Fig. 6(a). In FIG. 6( a ), a structural unit 5000 includes: an FBAR device 5010 , a support structure 5020 , a sacrificial layer 5030 , an electrode plate 5040 , a CMOS circuit 5050 and a silicon substrate 5060 . Finally, the material of the sacrificial layer is released, so that the effective resonance area of the FBAR is suspended and the electrical connection between the FBAR and the CMOS circuit is established. The final structure is shown in Figure 6(b). In FIG. 6( b ), the structure 5100 includes: a metal conductive film 5110 , an FBAR device 5120 , a supporting structure 5130 , an electrode plate 5140 , a CMOS circuit 5150 and a silicon subst...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More