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Low-temperature atomic layer deposition method for oxide film

A technology of atomic layer deposition and oxide thin film, which is applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problem of affecting the film properties and device functions, increasing the carbon impurity content of the film, and reducing the dielectric constant of the film and other issues to achieve the effect of expanding the application, improving the quality and increasing the deposition rate

Active Publication Date: 2019-05-28
合肥安德科铭半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At such a temperature, using aminosilane or amino metal complexes as precursors will increase the content of carbon impurities in the film, reduce the dielectric constant of the film, and increase the leakage current; while using metal halides as precursor materials, although it can Avoid carbon doping, but too low temperature will cause a large amount of halogen to accumulate in the film, which will affect the properties of the film and device functions, and the deposition temperature cannot be reduced

Method used

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  • Low-temperature atomic layer deposition method for oxide film
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  • Low-temperature atomic layer deposition method for oxide film

Examples

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Effect test

Embodiment 1

[0036] A SiO 2 Low Temperature Atomic Layer Deposition of Thin Films to SiCl 4 As a precursor material, atomic layer deposition is carried out on the substrate or device. After the chemical adsorption step is completed, the plasma treatment step is used to destroy the Si-Cl bond, effectively remove the halogen residue in the film, and improve the film quality.

[0037] The deposition method includes the following processes:

[0038] (1) Place a 300mm silicon wafer (100) in the ALD cavity and heat it to 100°C, and the SiCl 4 The precursor is introduced into the reaction chamber, and the precursor molecules are chemically adsorbed on the substrate surface;

[0039] (2) After the precursor material forms chemical adsorption on the substrate, extract the excess precursor and purge it with argon (Ar) with a flow rate of 100 sccm and a purge time of 1 sec; continue to feed Ar and light the plasma Body, used to break the chemical bond between Si-Cl, namely: The flow rate is 100s...

Embodiment 2

[0046] A SiO 2 Low temperature atomic layer deposition method of thin films to SiBr 4 As a precursor material, atomic layer deposition is performed on the substrate or device. After the chemical adsorption step is completed, the plasma treatment step is used to destroy the Si-Br bond, effectively remove the halogen residue in the film, and improve the film quality.

[0047] The deposition method includes the following processes:

[0048] (1) Place a 300mm silicon wafer (100) in the ALD chamber and heat it to 150°C; 4 The precursor is introduced into the reaction chamber, and the precursor molecules are chemically adsorbed on the substrate surface;

[0049] (2) After the precursor material forms chemical adsorption on the substrate, extract the excess precursor and purge it with helium (He) with a flow rate of 200 sccm and a purge time of 1 sec; continue to feed He and light the plasma Body, used to break the chemical bond between Si-Br, namely: The He flow rate is 200sccm...

Embodiment 3

[0058] a HfO 2 Low temperature atomic layer deposition method of thin films with HfCl 4 As a precursor material, atomic layer deposition is carried out on the substrate or device. After the chemical adsorption step is completed, the plasma treatment step is used to destroy the Hf-Cl bond, effectively remove the halogen residue in the film, and improve the film quality.

[0059] The deposition method includes the following processes:

[0060] (1) Place a 300mm silicon wafer (100) in an ALD chamber and heat it to 150°C; 4 The stainless steel container is heated to 90°C, and the HfCl is pumped by steam 4 The precursor is introduced into the reaction chamber, and the precursor molecules are chemically adsorbed on the substrate surface;

[0061] (2) After the precursor material forms chemical adsorption on the substrate, extract the excess precursor and purge it with argon (Ar) with a flow rate of 100 sccm and a purge time of 1 sec; continue to feed Ar and light the plasma Body...

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Abstract

The invention provides a low-temperature atomic layer deposition method for an oxide film. The low-temperature atomic layer deposition method is applied to the field of semiconductor films, can realize film deposition under a relatively low temperature, can also control the content of impurities in the film and maintains the deposition efficiency to be 1A / cycle or higher. According to the low-temperature atomic layer deposition method provided by the invention, a silicon halide or a metal halide or a metal oxyhalide is taken as a precursor material to implement atomic layer deposition on a substrate or an element; and after a chemical adsorption step is ended, halogen is removed by adopting plasma. The plasma treatment can damage the Si-X bond or the M-X bond (X represents halogen and M represent a metal), so that halogen residues in the film are effectively removed, and the quality of the film is improved; meanwhile, the Si-X bond or the M-X bond is damaged before oxidization, so someof halogen atoms are effectively removed, thus metal atoms are fully oxidized, and the deposition rate is also increased.

Description

【Technical field】 [0001] The invention belongs to the field of semiconductor material preparation, and in particular relates to a low-temperature atomic layer deposition method of an oxide thin film. 【Background technique】 [0002] In the field of semiconductors, high-quality metal oxide films are usually obtained by atomic layer deposition (ALD) of precursors on the bottom or on the device. According to the different precursors, the current thin film ALD preparation process mainly has the following three types: [0003] 1. Use aminosilane as a precursor to conduct atomic layer deposition to obtain high-quality silicon dioxide films; such as patents US5976991 and US8227032B2, use aminosilane as a precursor to deposit films at 200-400 °C, and the deposition rate is about 1A / cycle. [0004] 2. Use amino metal complexes or metal alkoxides as precursors to conduct atomic layer deposition to obtain high-quality metal oxide films; such as "Ti Source Precursors for Atomic Layer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/44
Inventor 李建恒芮祥新
Owner 合肥安德科铭半导体科技有限公司
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