Memory and method of forming the same
A technology of memory and storage structure, applied in the manufacturing of semiconductor devices, electric solid state devices, semiconductor/solid state devices, etc., can solve the problems of complex process flow, high process cost and long cycle of the through-wafer contact part, so as to improve the lateral isolation performance, simplification of process steps, the effect of reducing process costs
Active Publication Date: 2022-06-03
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0004] In the prior art, the process flow for forming the through-wafer contact part is complex and the cycle is long, resulting in high process cost
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[0028] Please refer to FIGS. 1A to 1D, which are schematic diagrams of a process of forming a semiconductor structure.
[0030] Please refer to FIG. 1B, the dielectric layer 110 and the substrate 101 are etched to form through the dielectric layer 110 and the substrate 101
[0031] Referring to FIG. 1C, an isolation layer 112 covering the inner wall surface of the through hole 111 is formed.
[0032] Referring to FIG. 1D, a part of the isolation layer 112 on the bottom surface of the through hole 111 is removed, and a conductive material is filled in the through hole
[0033] The above-mentioned formation process of the penetrating contact portion 113 is relatively complicated. After the through hole is formed by etching, an isolation layer needs to be formed.
[0034] In order to solve the above problems, the inventor proposes a new memory and a method for forming the same. formed on the surface of the substrate
[0036] Please refer to FIG. 2, a substrate 210 is provided, and an...
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Abstract
The present invention relates to a memory and a method for forming the memory. The method for forming the memory includes: providing a storage base, the storage base includes a substrate and a device layer, the device layer is formed on the front surface of the substrate, and the device layer A storage structure and an interconnection structure are formed therein, the interconnection structure is electrically connected to the storage structure, an insulating layer is formed in the substrate, and at least part of the interconnection structure is formed on the surface of the insulating layer , the top surface of the insulating layer is flush with the front surface of the substrate, and the bottom surface of the insulating layer is flush with the back surface of the substrate; the dielectric layer located on the back surface of the substrate and the bottom surface of the insulating layer; penetrates through the dielectric layer A through-contact portion of the electrical layer and the insulating layer, the through-contact portion forms an electrical connection with at least part of the interconnection structure. The above method can save process steps and reduce costs.
Description
Memory and method of forming the same technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a memory and a method for forming the same. Background technique [0002] In recent years, the development of flash memory (Flash Memory) memory is particularly rapid. The main features of flash memory are It can keep the stored information for a long time without powering on, and has the advantages of high integration, fast access speed, easy erasing and rewriting Therefore, it has been widely used in many fields such as microcomputer and automatic control. To further improve flash storage The bit density of the device (Bit Density), while reducing the bit cost (Bit Cost), three-dimensional flash memory (3D NAND) technology technology has developed rapidly. [0003] In the 3D NAND flash memory structure, including a storage array structure and a CMOS circuit above the storage array structure circuit structure, t...
Claims
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IPC IPC(8): H01L21/768H01L23/48
Inventor 肖亮陈赫
Owner YANGTZE MEMORY TECH CO LTD