A sic MOSFET open-loop active drive circuit

Abstract

The invention belongs to the technical field of circuit control, in particular to a SiC MOSFET open-loop active drive circuit. The circuit includes a traditional drive circuit, and also includes an auxiliary circuit, the auxiliary circuit includes a di / dt detection circuit and a shunt circuit; the di / dt detection circuit is used to judge the turn-on and turn-off phases of the SiC MOSFET, and judge the obtained The signal is transmitted to the shunt circuit; the shunt circuit shunts the gate current of the SiC MOSFET through the signal of the di / dt detection circuit. The present invention provides a SiC MOSFET open-loop active drive circuit, which adds a shunt circuit and a di / dt detection circuit after the traditional SiC MOSFET drive circuit, shortens the switching delay time, reduces the switching loss, and the active drive circuit is Open-loop operation reduces system cost and complexity.

Description

technical field [0001] The invention belongs to the technical field of circuit control, in particular to a SiC MOSFET open-loop active drive circuit. Background technique [0002] High power density, high efficiency and high reliability are the current development trends of power electronics technology. As a wide bandgap semiconductor device, SiC MOSFET has the characteristics of fast switching speed, low total loss, high breakdown voltage and high thermal conductivity. It has been widely used in the fields of new energy, motor drive, hybrid and electric vehicle controllers, etc. Applications. [0003] While SiC MOSFETs have several advantages, they create many problems when switching at high speeds. On the one hand, the di / dt of SiC MOSFET high-speed switching, through the parasitic inductance of the circuit, generates overvoltage and overcurrent, causing electromagnetic interference; on the other hand, overvoltage and overcurrent require higher device margins, resulting ...

AI Technical Summary

Problems solved by technology

The multi-level control method controls the switching speed by changing the driving voltage at different stages, and uses multiple driving power supplies in series or a resistor divider network to generate the required driving voltage. However, this method has complex circuits and low efficiency of the driving power supply. Generates large driver stage losses

The multi-driving resistance control method controls the switching speed by changing the driving resistance value in different stages, and switches the resistance to control the switching speed in the delay stage, current rising stage and Miller plateau stage. Each parallel branch contains a bidirectional switch, but due to The switching process of SiC MOSFET is short, and a faster driving circuit needs to be added for bidirectional switching

In addition, the multi-drive resistor control method generally uses CPLD / FPGA closed-loop control, which increases the cost and complexity of the system

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