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Photodetection thin film, photodetector and photodetection device

A light detection and thin-film technology, applied in the field of optical devices, can solve problems such as low signal-to-noise ratio and limited application range

Active Publication Date: 2019-06-11
SHANGHAI HARVEST INTELLIGENCE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] For this reason, it is necessary to provide a technical solution for light detection, which is used to solve the problems of low signal-to-noise ratio and limited application range of existing light detection films.

Method used

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  • Photodetection thin film, photodetector and photodetection device
  • Photodetection thin film, photodetector and photodetection device
  • Photodetection thin film, photodetector and photodetection device

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Experimental program
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Effect test

Embodiment 1

[0067] Such as Figure 4As shown, the photodetection film 501 includes a first gate switch 201 (hereinafter referred to as "TFT11"), a source 2, a drain 3, a first photosensitive diode 202 (hereinafter referred to as "diode 1"), a first capacitor 203 (hereinafter referred to as "capacitor 1"); the first gate switch 201 is arranged between the source 2 and the drain 3, for receiving the first gate scanning drive line 205 (hereinafter referred to as "gate scanning After the first switch turn-on signal transmitted by the driving line 1"), it is in the turn-on state to conduct the source 2 and the drain 3; the first photosensitive diode 202 is used to receive the first photocurrent, and the photocurrent (Here refers to Figure 4 The photocurrent 1 in , representing the photocurrent converted by diode 1) includes the first differential mode current (ie Figure 4 The differential mode current in ) and the first common mode current ( Figure 4 Common mode current 1 in the middle; ...

Embodiment 2

[0079] Such as Figure 7 As shown in FIG. 2 , it is a schematic diagram of the output of the differential mode signal by the photodetection film involved in another embodiment of the present invention. The light detection film includes a first gate switch 201 (ie TFT11), a source, a drain, a first photosensitive diode (ie diode 1), a first capacitor (ie capacitor 1); the first gate switch It is arranged between the source and the drain, and is used for turning on the source and the drain after receiving the first switch start signal transmitted by the first gate scanning driving line, so as to turn on the source and the drain; the first The photodiode is used to receive a first photocurrent, the photocurrent includes a first differential mode current and a first common mode current, the first photodiode is connected to a first capacitor, and the first capacitor is connected to a source;

[0080] The photodetection film also includes a common mode elimination circuit, and the ...

Embodiment 3

[0091] Such as Figure 5 As shown, the difference between the third embodiment and the second embodiment is that the number of the third gate switch is two, including the fourth gate switch 304 (ie TFT21) and the fifth gate switch 305 (ie TFT22), the The third capacitor 303 (i.e. capacitance d) is arranged between the fourth gate switch and the fifth gate switch, the fourth gate switch is arranged between the first photodiode and the third capacitor, and the fifth gate switch Located between the second photosensitive diode and the third capacitor, the fourth gate switch and the fifth gate switch share the second gate scanning driving line.

[0092] see Image 6 In this embodiment, two groups of TFTs are used to scan and drive the two photodiodes with different turn-on times, specifically by inputting a switching signal 1 to the gate scanning driving line 1 and inputting a switching signal 2 to the grid electrode scanning driving line 2 , the two switch signals will open two ...

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Abstract

The invention discloses a photodetection thin film, a photodetector and a photodetection device. The photodetection thin film comprises a common mode elimination circuit that achieves the purpose of eliminating a common mode signal and extracting a differential mode signal through two inversely connected diodes or by means of additionally providing TFT and capacitors. The photodetection device performs integral differential mode calculation on the photocurrent captured through the two sets of diodes by setting a differential amplifier in a signal reading chip so as to achieve the purpose of eliminating the common mode signal and extracting the differential mode signal. Compared with the prior art, the photodetection thin film, photodetector and photodetection device can effectively improvethe signal-to-noise ratio of photodetection so as to effectively expand the range of application of the photodetector, such as placing the photodetector under a display for biometrics recognition, and have broad market prospect.

Description

technical field [0001] The invention relates to the field of optical devices, in particular to a light detection device. Background technique [0002] The current display panel technology, whether it is a liquid crystal display (LCD), an active-matrix organic light-emitting diode (AMOLED) display, or a micro-LED display, is based on a thin-film transistor (TFT) The structure scans and drives a single pixel to realize the display function of the pixel array on the screen. The main structure forming the TFT switching function is a semiconductor field-effect transistor (FET). The main materials of the well-known semiconductor layer are amorphous silicon, polysilicon, indium gallium zinc oxide (IGZO), or organic compounds mixed with carbon nanomaterials, etc. . Since the structure of the photodetector diode (Photo Diode) can also be prepared using this type of semiconductor material, and the production equipment is also compatible with the production equipment of the TFT array...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/44
CPCG01J1/44G01J2001/446G01J2001/444G01J1/46G01J1/0295
Inventor 黄建东
Owner SHANGHAI HARVEST INTELLIGENCE TECH CO LTD
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