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Preparation method of low-doped fluorine-containing compound modified polybutene-1 film dielectric properties

A technology for dielectric properties and compounds is applied in the field of preparation of the dielectric properties of polybutene-1 films modified by low-doping fluorine-containing compounds, and can solve the problem of increased dielectric loss and the dielectric properties of polybutene-1 films. The problem of low constant is to increase the dielectric loss, ensure the service life and the preparation method is simple.

Active Publication Date: 2021-12-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the dielectric constant of the current polybutene-1 film is not high and the dielectric loss increases after modification, so as to provide a low-doping fluorine-containing compound modified polybutene-1 film dielectric performance preparation method

Method used

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  • Preparation method of low-doped fluorine-containing compound modified polybutene-1 film dielectric properties

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specific Embodiment approach 1

[0019] Specific implementation mode 1: This implementation mode is a preparation method for the dielectric properties of polybutene-1 film modified by low-doping fluorine-containing compounds, which is completed according to the following steps:

[0020] 1. Fluorine-containing compound pretreatment: disperse the fluorine-containing compound in an organic solvent, and ultrasonicate for 10-20 minutes at a frequency of 50Hz-90Hz to obtain an organic solution of the fluorine-containing compound;

[0021] 2. Preparation of fluorine-containing compound / polybutene-1 particles: mix the organic solution of fluorine-containing compound with polybutene-1 to obtain a mixture, put the mixture into a twin-screw extruder, and mix it at the blending temperature Extrude the mixture under the conditions of 180℃~210℃ and rotating speed 10r / min~15r / min, and granulate it through a pelletizer to obtain fluorine-containing compound / polybutene-1 pellets;

[0022] 3. Hot pressing into tablets: put flu...

specific Embodiment approach 2

[0029] Embodiment 2: This embodiment differs from Embodiment 1 in that the fluorine-containing compound described in Step 1 is perfluoroalkyl alcohol, hexafluorobutyl methacrylate or perfluorocaproic acid.

[0030] Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0031] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the organic solvent described in step one is n-heptane.

[0032] Other steps are the same as those in Embodiment 1 or 2.

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Abstract

The invention discloses a preparation method for the dielectric properties of a polybutene-1 film modified by a low-doping fluorine-containing compound, and relates to the technical field of polyolefin material processing. The purpose of the present invention is to solve the problem that the dielectric constant of the current PB‑1 film is not high and the dielectric loss increases after modification. Method: 1. Disperse the fluorine-containing compound in an organic solvent, and obtain the organic solution of the fluorine-containing compound by ultrasonic; 2. Mix it with polybutene‑1 to obtain a mixture, put it into a twin-screw extruder and extrude it. Granulating with a pelletizer to obtain fluorine-containing compound / polybutene-1 granules; 3. Pack fluorine-containing compound / polybutene-1 granules into a mold and heat press in a hot press to obtain fluorine-containing compound / polybutene-1 granules. butene-1 sheet; 4. Stretching the fluorine-containing compound / polybutene-1 sheet and cooling to room temperature to obtain a fluorine-containing compound-modified polybutene-1 film. The invention can obtain the preparation method of the dielectric properties of polybutene-1 film modified by fluorine-containing compound with low doping amount.

Description

technical field [0001] The invention relates to the technical field of polyolefin material processing, in particular to a preparation method for the dielectric properties of a polybutene-1 film modified by a low-doped fluorine-containing compound. Background technique [0002] With the rapid development of new technologies in all walks of life, electronic devices are developing in the direction of miniaturization and miniaturization, and the requirements for the dielectric properties of electronic materials are getting higher and higher. There are two main research hotspots in today's dielectric materials: one is to develop new materials with high dielectric strength, high dielectric constant, and low dielectric loss; the other is to study new processes and models. The dielectric constant of pure polymers is low (generally <10), and the dielectric constant of ceramic materials is high, but the processing temperature is also high and the mechanical properties are poor. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L23/20C08K5/09C08J5/18B29C55/16B29L7/00
Inventor 徐用军龙妍彤李凌飞闫义彬
Owner HARBIN INST OF TECH
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