Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Carbon doped graphite phase carbon nitride film and preparation method thereof

A graphite phase carbon nitride and carbon nitride technology, which is applied in chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc., can solve the problems of weak photoresponse current and difficult control of film uniformity, and achieve Low cost, excellent photocatalytic activity, and simple process

Inactive Publication Date: 2019-06-18
香港城市大学深圳研究院
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

g-C synthesized by this method 3 N 4 There are many holes on the surface of the film, and the uniformity of the film is difficult to control, so that the photoresponse current is weak

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon doped graphite phase carbon nitride film and preparation method thereof
  • Carbon doped graphite phase carbon nitride film and preparation method thereof
  • Carbon doped graphite phase carbon nitride film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] This embodiment provides a method for preparing a carbon-doped graphite phase carbon nitride film, the process flow is as follows figure 1 shown, including the following steps:

[0030] Mix 9g of urea, 2.4g of formaldehyde solution (aqueous solution with a concentration of 37%) and 150mL of deionized water evenly, heat to 85°C, add 6mL of sulfuric acid solution with a concentration of 2mol / L, react for 10min, and filter and dry to obtain the modified Carbon nitride precursor;

[0031] Take 3g of the modified precursor and put it into the crucible, cover it with 5cm×5cm×0.32cm FTO glass, with the conductive surface facing the inside of the crucible, cover it with a heavy object, transfer the crucible to the muffle furnace at a rate of 3°C / min Raise the temperature to 550° C. for 3 hours, and cool to room temperature after heating to obtain a carbon-doped graphite phase carbon nitride film with a thickness of 200 nm.

[0032] figure 2 It is a scanning electron microgr...

Embodiment 2

[0036] This embodiment provides a method for preparing a carbon-doped graphite phase carbon nitride film, comprising the following steps:

[0037] Mix 6.3g of melamine, 0.8g of formaldehyde solution (aqueous solution with a concentration of 37%) and 150mL of deionized water evenly, heat to 85°C, add 5mL of sulfuric acid solution with a concentration of 2mol / L, react for 10min, filter and dry to obtain the modified carbon nitride precursor;

[0038] Take 3g of the modified precursor and put it into the crucible, cover it with 5cm×5cm×0.32cm FTO glass, with the conductive surface facing the inside of the crucible, cover it with a heavy object, transfer the crucible to the muffle furnace at a rate of 3°C / min Raise the temperature to 550°C for 3 hours, then cool to room temperature after heating to obtain a carbon-doped graphite phase carbon nitride film with a photoresponse current density of 203.2 μA cm -2 , film thickness is 100nm.

Embodiment 3

[0040] This embodiment provides a method for preparing a carbon-doped graphite phase carbon nitride film, comprising the following steps:

[0041] Mix 10g of thiourea, 2.1g of formaldehyde solution (aqueous solution with a concentration of 37%) and 150mL of deionized water evenly, heat to 85°C, add 3mL of sulfuric acid solution with a concentration of 2mol / L, react for 10min, filter and dry to obtain the modified carbon nitride precursor;

[0042] Take 3g of the modified precursor and put it into the crucible, cover it with 5cm×5cm×0.32cm FTO glass, with the conductive surface facing the inside of the crucible, cover it with a heavy object, transfer the crucible to the muffle furnace at a rate of 3°C / min Raise the temperature to 550°C for 3 hours, then cool to room temperature after heating to obtain a carbon-doped graphite phase carbon nitride film with a photoresponse current density of 101.5 μA cm -2 , film thickness is 80nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a carbon doped graphite phase carbon nitride film and a preparation method thereof. The preparation method includes: dispersing a carbon source and a carbon nitride precursor inwater, carrying out polymerization reaction at 30DEG C-100DEG C in the presence of an acid catalyst, and conducting filtering and drying to obtain a modified precursor; and placing the modified precursor into a crucible, covering the crucible with a substrate, performing heating to 500DEG C-650DEG C and performing heat preservation for 0.5h-5h, thus obtaining the carbon doped graphite phase carbon nitride film. The invention also provides the carbon doped graphite phase carbon nitride film prepared by the above-mentioned preparation method. The carbon doped graphite phase carbon nitride filmprovided by the invention has the advantages of simple preparation process, low cost and excellent photocatalytic activity.

Description

technical field [0001] The invention relates to a method for preparing a photoelectric catalytic film, in particular to a method for preparing a carbon-doped graphite phase carbon nitride film with high photoelectric catalytic activity, and belongs to the technical field of material preparation. Background technique [0002] In recent years, graphitic carbon nitride (g-C 3 N 4 ) has received extensive attention from the scientific community and has been studied for hydrogen production from water splitting, organic synthesis, CO 2 Reduction and photodegradation of organic matter and other fields. [0003] g-C 3 N 4 It has the advantages of low raw material cost, simple synthesis technology, good chemical stability, etc., so that it can meet the requirements of large-scale industrial production. However, pure g-C 3 N 4 It has the disadvantages of large band gap (2.7eV), and the difficulty of separation and conduction of photogenerated charge holes. In the photoelectroca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J27/24B01J35/02
Inventor 张瑞勤熊伟
Owner 香港城市大学深圳研究院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com