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A device and method for removing a mechanically damaged layer on the surface of a single crystal silicon rod

A single crystal silicon rod, mechanical damage technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of increasing production costs and environmental pressure of etchants, unfavorable surface morphology of single crystal silicon rods, etchants and high-purity water. Waste and other problems, to achieve the effect of easy observation, uniform corrosion and cleaning, and reduction of acid consumption

Active Publication Date: 2020-12-29
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the size of the etching tank for removing the mechanically damaged layer on the surface of single crystal silicon rods is quite different from that of single crystal silicon rods, and the use of etchant and high-purity water is wasteful, which increases production costs and environmental pressure brought by etchant
The inhomogeneity of the corrosion and cleaning process causes many snowflake-like plaques on the surface of the single crystal silicon rod, which is not conducive to observing the surface morphology of the single crystal silicon rod

Method used

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  • A device and method for removing a mechanically damaged layer on the surface of a single crystal silicon rod
  • A device and method for removing a mechanically damaged layer on the surface of a single crystal silicon rod
  • A device and method for removing a mechanically damaged layer on the surface of a single crystal silicon rod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Firstly, an etchant and a single crystal silicon rod are provided for removing the mechanically damaged layer on the surface of the single crystal silicon rod. In this embodiment, the single crystal silicon rod to be etched has a diameter of 152.4 mm and a length of 400 mm, and the etching tank 2 is used to etch and clean the single crystal silicon rod. The corrosive agent is composed of hydrofluoric acid and nitric acid, the mass concentration of hydrofluoric acid is 40%, and the mass concentration of nitric acid is 65%. The ratio of hydrofluoric acid and nitric acid solution is 1:4.1.

[0028] Then, by rotating the screw, the monocrystalline silicon rod is firmly clamped between the two clamping blocks, and the screw, connecting rod and rotating motor are connected.

[0029] Next, the etchant is poured into the etchant until the etchant covers the monocrystalline silicon rod. Turn on the switch of the rotating motor, and set the rotation speed and rotation direction...

Embodiment 2

[0033] The step of removing the mechanically damaged layer on the surface of the monocrystalline silicon rod is basically the same as in Example 1, the difference being that the diameter of the corroded monocrystalline silicon rod is 204.2 mm and the length is 300 mm, and the single crystal silicon rod is etched and etched by using the etching tank 3 cleaning.

[0034] Check the single crystal size, the diameter is 203.2mm, and the thickness of the removed mechanical damage layer is 0.5mm. Observe the appearance of the single crystal, the corrosion is uniform, the surface is bright, and there is no snowflake-like plaque.

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Abstract

The invention discloses a device and a method for removing mechanical damage layers on the surfaces of single crystal silicon rods. The device comprises a corrosion tank and spray-type cleaning watertubes, wherein the corrosion tank is divided into three cuboid-shaped corrosion troughs which are mutually isolated and have different sizes; two opposite sidewalls of every corrosion trough are respectively provided with screw holes, a screw is inserted to every screw hole, one end, located in the corresponding trough, of every screw is connected with a clamping block, every single crystal silicon rod is clamped between the two clamping blocks with clamping grooves, and the screws are rotated to make the clamping blocks clamp the single crystal silicon rods; one ends, located outside the tank, of the screws are connected with a rotating motor through a connecting rod, and the rotating motor drives the screws to drive the single crystal silicon rods and the clamping blocks to rotate; and the spray-type cleaning water tubes are respectively arranged at the upper edges of the two sidewalls of the tank, every water tube is provided with a switch for regulating the water flow, and every water tube is provided with a plurality of uniformly distributed nozzles. The device and the method can improve the uniformity of corrosion and cleaning of the single crystal silicon rods, reduce snow-like marks on the surfaces of the single crystal silicon rods and increase the surface brightness of the single crystal silicon rods.

Description

technical field [0001] The invention relates to a device and a method for removing a mechanical damage layer on the surface of a single crystal silicon rod, belonging to the technical field of single crystal silicon rod processing. Background technique [0002] In the second half of 2016, the global semiconductor market recovered, and the annual market size reached 330 billion US dollars, an increase of 1.1% over 2015. In the first half of 2017, the global semiconductor market reached US$190.5 billion, a year-on-year increase of 21.00%, which is the fastest growing and largest semi-annual market share since 2010. The global semiconductor industry has entered a period of moderate growth. Driven by the continuous growth of the semiconductor industry, the most basic monocrystalline silicon material industry is also developing steadily. The demand for single crystal silicon rods used in the manufacture of silicon components and chips has greatly increased, and it is particular...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/06
Inventor 秦瑞锋姜舰鲁强盖晶虎崔彬戴小林吴志强
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD