A method for regulating vacancy defects in materials

Abstract

The invention discloses a method for regulating a vacancy defect of a material. The method, by inserting a stress applying material into a phase change functional material, regulates the vacancy defect concentration in the phase change functional material, and thus obtains a composite structure formed by the embedded growth of the phase change functional material and the stress applying material.The phase change property of the composite structure is mainly determined by the phase change functional material therein. By the regulation of the stress applying material, the phase change propertyof the composite structure varies on the basis of the phase change property of the phase change functional material crystal obtained by the pure phase change functional material, and the stress application material is specifically a material capable of forming a crystalline state. In particular by inserting the stress applying material having a slightly larger lattice constant into the phase change functional material having a slightly smaller lattice constant, the method can reduce the vacancy defect concentration of the phase change memory material, thereby lowering the threshold of the crystallization process and increasing the crystallization speed.

Description

technical field [0001] The invention belongs to the field of microelectronic materials, and more specifically relates to a method for regulating vacancy defects in materials. The method can actively modulate material defects, and in particular can regulate vacancy defects in phase-change storage materials. Background technique [0002] Phase-change memory materials have attracted much attention because they can quickly realize reversible transformation between low-resistance state and high-resistance state by applying electricity or light pulses. The process of changing from high resistance to low resistance is called SET process. The process is called the RESET process. Storage technology based on phase-change materials is considered to be one of the strong competitors of next-generation storage technology. Phase-change memory devices have the advantages of fast erasing and writing speeds, large differences between two states, and compatibility with existing complementary ...

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Problems solved by technology

On the other hand, the existence of vacancies will form voids in the process of repeated erasing and writing of phase change memory materials, leading to their performance failure, which may be an important factor limiting the cycle erasing ability of phase change materials (Njoroge W K, H W, Wuttig M. Density changes upon crystallization of Ge 2 Sb 2.04 Te 4.74 films[J].Journal of Vacuum Science&Technology A:Vacuum, Surfaces, and Films,2002,20(1):230-233.)

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