Light-emitting diode device and preparation method thereof

A technology of light-emitting diodes and composite light-emitting layers, applied in the field of quantum dots, can solve the problems affecting the carrier transport performance of QLED luminous efficiency, stability, etc., to improve luminous efficiency and device stability, easy to repeat, and promote excited states The effect of complex electroluminescence

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, and provide a light-emitting diode device and its preparation method, aiming at solving the problem of ...

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  • Light-emitting diode device and preparation method thereof

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preparation example Construction

[0022] On the other hand, an embodiment of the present invention also provides a method for manufacturing a light emitting diode, which includes the following steps:

[0023] S01: Provide the anode;

[0024] S02: depositing the composite light-emitting layer on the anode;

[0025] S03: depositing the electron transport layer on the composite light-emitting layer;

[0026] S04: Depositing the cathode on the electron transport layer.

[0027] The preparation method of the light-emitting diode provided by the embodiment of the present invention is simple, easy to repeat, and easy to realize large-scale preparation, and the final light-emitting diode can not only promote the carrier transport performance, but also promote the perovskite quantum dot material and The synergistic effect of non-perovskite quantum dot materials produces excited state complex electroluminescence, which improves the luminous efficiency of the light-emitting diode and the stability of the device.

[0028] Further, ...

Embodiment 1

[0042] A QLED device whose structural components are described as follows from bottom to top: glass substrate / ITO / PEDOT:PSS / TFB / CdSe@ZnS / CH 3 NH 3 PbBr 3 / Surface modified ZnO & unmodified ZnO / Al, its preparation method is as follows:

[0043] a. Spin-coating a layer of PEDOT:PSS film on the ITO substrate as a hole injection layer;

[0044] b. Spin-coating a TFB layer on the PEDOT:PSS layer;

[0045] c. Spin-coating a CdSe@ZnS quantum dot layer on the TFB layer, and then spin-coating a layer of CH on the quantum dot layer 3 NH 3 PbBr 3 Organic-inorganic hybrid perovskite layer to obtain quantum dot composite light-emitting layer;

[0046] d. Dissolve nano-ZnO in ethanol to form a 30mg / mL solution, pour into the solution and nano-ZnO with a weight ratio of 1:30 ethanedithiol, keep it in a water bath at 40°C for 3 hours, stop stirring and cool. After the solution is completely cooled, it is spin-coated on the quantum dot composite light-emitting layer to obtain a surface-modified nano-...

Embodiment 2

[0049] A light-emitting diode device whose structural materials are described in order from bottom to top: glass substrate / ITO / PEDOT:PSS / TFB / CdSe@ZnS / CH 3 NH 3 PbBr 3 / Surface modified ZnO / Al, its preparation method is as follows:

[0050] a. Spin-coating a layer of PEDOT:PSS film on the ITO substrate as a hole injection layer;

[0051] b. Spin-coating a TFB layer on the PEDOT:PSS layer;

[0052] c. Spin-coating a CdSe@ZnS quantum dot layer on the TFB layer, and then spin-coating a layer of CH on the quantum dot layer 3 NH 3 PbBr 3 Organic-inorganic hybrid perovskite layer to obtain quantum dot composite light-emitting layer;

[0053] d. Dissolve nano-ZnO in ethanol to form a 30mg / mL solution, pour into the solution and nano-ZnO with a weight ratio of 1:30 ethanedithiol, keep it in a water bath at 40°C for 3 hours, stop stirring and cool. After the solution is completely cooled, it is spin-coated on the quantum dot composite light-emitting layer to obtain a surface-modified nano-ZnO l...

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Abstract

The invention belongs to the field of quantum dots, and specifically relates to a light-emitting diode device and a preparation method thereof. The light-emitting diode comprises an anode, a compositelight-emitting layer, an electron transport layer and a cathode which are arranged in a stacked manner, wherein the composite light-emitting layer includes a perovskite quantum dot material and a non-perovskite quantum dot material, and the electron transport layer includes an electron transport material grafted with a defective passivating agent. The light-emitting diode not only can promote thecarrier transport performance, but also can effectively avoid methyl ammonium cation deprotonation between a defective group and the perovskite quantum dot material in the composite light-emitting layer, thereby optimizing the application effect of the perovskite quantum dot material in the light-emitting diode device, promoting the synergistic effect of the perovskite quantum dot material and the non-perovskite quantum dot material to produce excited-state complex electroluminescence, and improving the light-emitting efficiency of the light-emitting diode and the stability of the device.

Description

Technical field [0001] The invention belongs to the field of quantum dots, and specifically relates to a light emitting diode device and a preparation method thereof. Background technique [0002] A light-emitting diode device generally includes a light-emitting layer, an electrode, and a functional layer between the two. The functional layer generally includes a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer. People continue to improve the material structure of each layer to improve the performance of the device. Colloidal quantum dots have considerable application prospects in the field of display devices because of their high fluorescence efficiency, good monochromaticity, adjustable emission wavelength and good stability. Quantum dot light-emitting diodes (quantum dot light-emitting diodes, QLEDs) based on quantum dots have the advantages of better color saturation, energy efficiency, color temperature, and long lif...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
Inventor 张珈铭
Owner TCL CORPORATION
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