White-light quantum dot light-emitting diode and preparation method thereof
A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of inability to prepare stacked quantum dot light-emitting layers, achieve stable polychromatic light, reduce manufacturing processes, and expand options range effect
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[0035] As an implementation, X2 -COOH, -OH, -CN, -NHCO-CH 3 , -NH 2 , -SH, -CHO, the replacement ligands formed can be understood as strong polar ligands, including but not limited to mercaptoacetic acid, 3-mercaptopropionic acid, 3-mercaptobutyric acid, 6-mercaptohexanoic acid, mercaptoethyl Amine, 3-mercaptopropylamine, 4-mercaptobenzoic acid, mercaptoglycerol, 1-trimethylamineethanethiol, mercaptoaniline, nitroaniline, sulfoaniline, aminobenzoic acid, 4-(diphenylphosphino) at least one of benzoic acids.
[0036] As another embodiment, X 2 -CO-, -COOR, -NO 2 , -O-, -O-CH 3 、-CH 3 When, the replacement ligands constituted can be understood as weak polar replacement ligands, including but not limited to octylamine, propylamine, hexadecylamine, 4-mercaptoanisole, 1-hydroxy-3-methoxy-propane at least one of . Of course, the embodiment of the present invention can also adjust the polarity of the replacement ligand by adjusting the carbon chain length of R. Specifically, th...
Embodiment 1
[0075] This embodiment provides a white light quantum dot light emitting diode and a preparation method thereof. The white light quantum dot light-emitting diode comprises a laminated and combined ITO glass, a PEDOT layer, a TFB layer, a CdSe red quantum dot light emitting layer, a CdSe green quantum dot light emitting layer, a CdSe blue light quantum dot light emitting layer, a ZnO layer and an Al layer. And the quantum dots in the surface layer of the CdSe red quantum dot light-emitting layer and the CdSe green quantum dot light-emitting layer are combined with 3-mercapto groups Propionic acid ligands, and cross-linking between adjacent 3-mercaptopropionic acid ligands.
[0076] The quantum dot light-emitting diode of this embodiment is prepared according to the following method:
[0077] S11. Dissolving 3-mercaptopropionic acid in ethanol to prepare a displacement ligand solution;
[0078] S12. Print the PEDOT hole injection layer, the TFB hole transport layer, and the fi...
Embodiment 2
[0083] This embodiment provides a white light quantum dot light emitting diode and a preparation method thereof. The white light quantum dot light-emitting diode comprises a laminated and combined ITO glass, a PEDOT layer, a TFB layer, a CdSe red quantum dot light emitting layer, a CdSe green quantum dot light emitting layer, a CdSe blue light quantum dot light emitting layer, a ZnO layer and an Al layer. And the quantum dots in the surface layer of the CdSe red quantum dot light-emitting layer and the CdSe green quantum dot light-emitting layer are combined with 3-mercapto groups on the quantum dots in the surface layer of the CdSe green quantum dot light-emitting layer and the CdSe blue quantum dot light-emitting layer. Propylamine ligands and propylamine ligands, and cross-linking between adjacent 3-mercaptopropylamine ligands, between propylamine ligands, and between 3-mercaptopropylamine ligands and propylamine ligands.
[0084] The quantum dot light-emitting diode of thi...
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