White-light quantum dot light-emitting diode and preparation method thereof

A quantum dot luminescence and quantum dot technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problem that multi-layer quantum dot films cannot be stacked layer by layer, and achieve sufficient and good ligand replacement. Choice of flexible, low-cost effects

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, and provide a white light quantum dot light-emitting diode and its preparation method, aiming to solve the p

Method used

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  • White-light quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0020] On the one hand, an embodiment of the present invention provides a method for preparing a white light quantum dot light-emitting diode, comprising the following steps:

[0021] S01: Provide bottom electrode;

[0022] S02: prepare a quantum dot prefabricated film on the bottom electrode, and the surface of the quantum dots in the quantum dot prefabricated film is connected with an initial ligand; place the quantum dot prefabricated film in a sealable device, and pass gaseous replacement Ligand, performing gas phase ligand replacement to obtain a first layer of quantum dot film with the replacement ligand bound on the surface of the quantum dot, and the replacement ligand can connect at least two quantum dots;

[0023] S03: using the method for preparing the first layer of quantum dot films to prepare N-layer stacked quantum dot films to obtain a light-emitting stack; or

[0024] Using the method for preparing the first quantum dot film to obtain N-1 layered quantum dot ...

Embodiment 1

[0060] A preparation method of a quantum dot film, comprising the following steps:

[0061] Provide a prefabricated film of CdSe quantum dots, transfer the prefabricated film of quantum dots into a vacuum chamber, and pass 1,2-ethanedithiol gas, wherein the internal pressure of the vacuum chamber is 5Pa, 1,2-ethanedithiol The partial pressure of the gas was 1Pa, the temperature inside the chamber was 25°C, and the treatment time was 30min. After the treatment, the film was taken out to obtain a CdSe quantum dot film in which the ligand was replaced by 1,2-ethanedithiol.

Embodiment 2

[0063] A preparation method of a white light quantum dot light-emitting diode, comprising the following steps:

[0064] The PEDOT hole injection layer, the TFB hole transport layer, and the first layer of CdSe red quantum dot prefabricated films were printed in sequence on the ITO anode;

[0065] The first layer of CdSe red light quantum dot prefabricated film prepared above was transferred into a vacuum chamber, and 1,2-ethanedithiol gas was introduced, wherein the internal pressure of the chamber was 5Pa and the proportion of 1,2-ethanedithiol gas. The pressure is 1Pa, the temperature inside the chamber is 25°C, and the treatment time is 30min. After the treatment, it is taken out to obtain the first layer of CdSe red quantum dot film after ligand replacement;

[0066] A second layer of CdSe green quantum dot prefabricated film was printed on the first layer of CdSe red quantum dot film replaced by ligands, and then the second layer of CdSe green quantum dot film was transfe...

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Abstract

The invention relates to a white-light quantum dot light-emitting diode and a preparation method thereof. The preparation method comprises the steps of providing a bottom electrode; preparing a quantum dot prefabricated film on the bottom electrode, wherein the surface of a quantum dot in the quantum dot prefabricated film is connected with an initial ligand; placing the quantum dot prefabricatedfilm in a device capable of being sealed, and introducing a gaseous displacement ligand for gas-phase ligand displacement to obtain a first quantum dot film with the surface of the quantum dot being bound with the displacement ligand, wherein the displacement ligand can be connected to at least two quantum dots; preparing N laminated quantum dot films by adopting the preparation method of the first quantum dot film to obtain a light-emitting laminated layer; or preparing (N-1) laminated quantum dot films by adopting the preparation method of the first quantum dot film, preparing an organic light-emitting film on the (N-1)th quantum dot film to obtain a light-emitting laminated layer, wherein N is a positive integer which is greater than or equal to 2 and less than or equal to 10, the light-emitting laminated layer compositely emits white light, the bottom electrode is an anode, the top electrode is a cathode, or the bottom electrode is a cathode, and the top electrode is an anode.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, in particular to a white light quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dot is a kind of quasi-zero-dimensional nanomaterial, similar to superlattice and quantum well, its particle size is about 1-100nm, and has the properties of quantum confinement effect, surface effect, quantum size effect and quantum tunneling effect. , at the same time, it has outstanding advantages such as good monochromaticity, high color purity and narrow emission spectrum, and is a very promising nanomaterial. Light-emitting diodes based on quantum dots are called quantum dots light-emitting diodes (QLEDs), which are a new type of display technology device. The advantages of quantum dot display lie in the advantages of wide color gamut coverage, easy color control and high color purity. It is considered to be a new star in display technology and ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
Inventor 曹蔚然梁柱荣杨一行向超宇钱磊
Owner TCL CORPORATION
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