A kind of fabrication method of columnar coaxial ring nanostructure
A nanostructure and manufacturing method technology, applied in the field of micro-nanostructure preparation, can solve the problems of high cost, reduced freedom of nano-imprinting, low efficiency, etc., and achieve the effects of high processing freedom and low cost
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Embodiment 1
[0044] Figure 1-Figure 2 The manufacturing method of the shown columnar coaxial ring nanostructure, it may further comprise the steps:
[0045] (1) Film material A and film material B are coated successively on the silicon substrate, wherein, film material A is photoresist SU8 resistant to organic solvent corrosion, and film material B is positive resist Ar-P- 3740; and a layer of material C is plated on the upper surface of material B by physical deposition, and material C is titanium with a thickness of 30nm, such as figure 2 a.
[0046] (2) the surface of the substrate after step (1) arranges a layer of polystyrene (PS) balls with a diameter of 1um by self-assembly method, such as figure 2 b, The size of the diameter of the spheres here will determine the period size of the final columnar coaxial nanostructure, or when the self-assembly process is controlled so that the spheres are randomly distributed, a randomly arranged columnar coaxial nanostructure can finally be ...
Embodiment 2
[0063] The difference between the manufacturing method of the columnar coaxial ring nanostructure in this embodiment and the embodiment 1 is that the substrate is a silicon dioxide substrate. Inductively Coupled Plasma Etching (ICP) etched silicon dioxide substrates using C 4 f 8 Mixed gas with He as the reaction gas. The specific etching process parameters are shown in Table 3:
[0064] Table 3 Process parameters of inductively coupled plasma etching (ICP) etching substrate silicon dioxide
[0065]
[0066] In this embodiment, the etching time of the base silicon dioxide is 190s.
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