Semiconductor material for extra-high and ultra-high voltage grading ring and grading ring production technology

A technology of ultra-ultra-high voltage and equalizing rings, which is applied in the field of equalizing rings, can solve problems such as failure, overvoltage of equalizing rings, etc., and achieve the effect of small material shrinkage and convenient molding

Inactive Publication Date: 2019-06-28
平顶山正植科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problem that the existing grading ring materials are likely to cause the grading ring to overvoltage and fail under ultra-high voltage, and provides a semiconductor material for grading rings for ultra-ultra-high voltage and a production process for grading rings. With the use of semiconduc

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The preparation process of ultra-high voltage grading rings made of semiconductor materials:

[0034] Ingredients: earthy graphite 16.75 kg, industrial multilayer graphene 0.25 kg, phenolic resin for friction material 50 kg, SiO treated with silane coupling agent 2 33 kg.

[0035] The preparation process is as follows: use ball mill to mix and grind, then use 200-mesh sieve to sieve the sieved material, put it into the mold for producing pressure equalizing rings, and heat-press molding, molding pressure: 30 MPa, molding temperature: 230 ° C, at 230 ° C The holding time at the temperature is 50 minutes.

[0036] The performance of the pressure equalizing ring obtained above is as follows: electrical conductivity: 1.08s / m; bending strength: 128.31MPa; tensile strength: 195MPa; linear expansion coefficient: 0.22×10 -4 / ℃; material shrinkage: 0.45%; material density: 1.84g / cm 3 .

Embodiment 2

[0038] The preparation process of ultra-high voltage grading rings made of semiconductor materials:

[0039] Ingredients: 11.6 kg of graphite for brushes, 0.4 kg of industrial multilayer graphene, 53 kg of phenolic resin for friction materials, SiO treated with silane coupling agent 2 35kg.

[0040] The preparation process is as follows: use ball mill to mix and grind, then use 230-mesh sieve to sieve the sieved material, put it into the mold for producing pressure equalizing rings, and heat-press molding, molding pressure: 20 MPa, molding temperature: 190°C, at 190°C The holding time at the temperature is 65 minutes.

[0041] The properties of the pressure equalizing ring obtained above are as follows: electrical conductivity: 0.8 s / m; bending strength: 145.65 MPa; tensile strength: 215 MPa; linear expansion coefficient: 0.23×10 -4 / ℃; material shrinkage: 0.42%; material density: 1.88g / cm 3 .

Embodiment 3

[0043] The surface of the equalizing ring prepared in embodiment 1 or 2 can further adopt the magnetron co-sputtering process to prepare an Al-Ag composite coating, and the specific preparation process of the Al-Ag composite coating is as follows: the obtained equalizing ring is subjected to After cleaning and drying (the specific cleaning and drying operations are as follows: ultrasonication in acetone for 20 minutes, ultrasonication in absolute ethanol for 20 minutes, ultrasonication in deionized water for 10 minutes, and then drying at 60°C for later use), and then using DC sputtering mode, The substrate on which the parts are loaded rotates during sputtering, the substrate is not heated during the sputtering process, the Al target with a purity higher than 99.99% and the Ag target with a purity higher than 99.99% are used as the sputtering source, and argon is used as the sputtering gas. The sputtering pressure is 0.5-1 Pa, adjust the sputtering power of the Ag target and t...

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Abstract

The invention aims to solve the problems that an existing grading ring material easily causes electromigration and failure of a grading ring at an extra-high and ultra-high voltage, and provides a semiconductor material for an extra-high and ultra-high voltage grading ring and a grading ring production technology. A grading ring body is prepared from the semiconductor material including, by weight, 10-25% of graphite, 0.01-0.5% of graphene, 25-45% of phenolic resin for friction materials and the balance SiO2. There is an electric field in the grading ring produced by using the semiconductor material at the extra-high and ultra-high voltage, and the electromigration problem is solved fundamentally; during abrupt change of the voltage, by means of the grading ring, device breakdown is not likely to occur, and the overall reliability of the device is obviously improved.

Description

technical field [0001] The invention belongs to the technical field of pressure equalizing rings, and in particular relates to a semiconductor material for an ultra-ultra-high voltage equalizing ring and a production process for the equalizing ring. Background technique [0002] The equalizing ring is one of the important components on the high-voltage equipment. It is a ring-shaped part used to improve the voltage distribution on the insulator. There is no potential difference between the various parts of the ring, so as to achieve the effect of equalizing pressure. [0003] At present, the traditional materials of the grading ring are aluminum alloy and stainless steel. Under ultra-ultra-high voltage, because there is no electric field inside the metal material, the grading ring has an electric surge, which is easy to cause device failure when the voltage changes suddenly in the ultra-ultra-high voltage environment. Contents of the invention [0004] The present inventi...

Claims

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Application Information

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IPC IPC(8): C08L61/06C08K3/04C08K7/00C08K9/06C08K3/36
Inventor 白慧琳高海涛郝逢媛冯焕丽马占山
Owner 平顶山正植科技有限公司
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