Semiconductor material for extra-high and ultra-high voltage grading ring and grading ring production technology
A technology of ultra-ultra-high voltage and equalizing rings, which is applied in the field of equalizing rings, can solve problems such as failure, overvoltage of equalizing rings, etc., and achieve the effect of small material shrinkage and convenient molding
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Embodiment 1
[0033] The preparation process of ultra-high voltage grading rings made of semiconductor materials:
[0034] Ingredients: earthy graphite 16.75 kg, industrial multilayer graphene 0.25 kg, phenolic resin for friction material 50 kg, SiO treated with silane coupling agent 2 33 kg.
[0035] The preparation process is as follows: use ball mill to mix and grind, then use 200-mesh sieve to sieve the sieved material, put it into the mold for producing pressure equalizing rings, and heat-press molding, molding pressure: 30 MPa, molding temperature: 230 ° C, at 230 ° C The holding time at the temperature is 50 minutes.
[0036] The performance of the pressure equalizing ring obtained above is as follows: electrical conductivity: 1.08s / m; bending strength: 128.31MPa; tensile strength: 195MPa; linear expansion coefficient: 0.22×10 -4 / ℃; material shrinkage: 0.45%; material density: 1.84g / cm 3 .
Embodiment 2
[0038] The preparation process of ultra-high voltage grading rings made of semiconductor materials:
[0039] Ingredients: 11.6 kg of graphite for brushes, 0.4 kg of industrial multilayer graphene, 53 kg of phenolic resin for friction materials, SiO treated with silane coupling agent 2 35kg.
[0040] The preparation process is as follows: use ball mill to mix and grind, then use 230-mesh sieve to sieve the sieved material, put it into the mold for producing pressure equalizing rings, and heat-press molding, molding pressure: 20 MPa, molding temperature: 190°C, at 190°C The holding time at the temperature is 65 minutes.
[0041] The properties of the pressure equalizing ring obtained above are as follows: electrical conductivity: 0.8 s / m; bending strength: 145.65 MPa; tensile strength: 215 MPa; linear expansion coefficient: 0.23×10 -4 / ℃; material shrinkage: 0.42%; material density: 1.88g / cm 3 .
Embodiment 3
[0043] The surface of the equalizing ring prepared in embodiment 1 or 2 can further adopt the magnetron co-sputtering process to prepare an Al-Ag composite coating, and the specific preparation process of the Al-Ag composite coating is as follows: the obtained equalizing ring is subjected to After cleaning and drying (the specific cleaning and drying operations are as follows: ultrasonication in acetone for 20 minutes, ultrasonication in absolute ethanol for 20 minutes, ultrasonication in deionized water for 10 minutes, and then drying at 60°C for later use), and then using DC sputtering mode, The substrate on which the parts are loaded rotates during sputtering, the substrate is not heated during the sputtering process, the Al target with a purity higher than 99.99% and the Ag target with a purity higher than 99.99% are used as the sputtering source, and argon is used as the sputtering gas. The sputtering pressure is 0.5-1 Pa, adjust the sputtering power of the Ag target and t...
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