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Thermosensitive film and preparation method and application thereof

A heat-sensitive thin-film and thin-film technology, applied in thin-film resistors, vacuum evaporation plating, coating, etc., can solve problems affecting device stability, high noise, thermal hysteresis loops, etc., and achieve easy control and preparation of resistance The process is simple and easy, and the effect of long-term stable electrical performance

Active Publication Date: 2019-07-09
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still defects in these two materials, such as the metal-insulator phase transition of vanadium dioxide at around 68 °C in vanadium oxy compound, which will lead to thermal hysteresis loops, thereby affecting the stability of the device; in addition, due to There are many valence states of vanadium element, so the process of preparing vanadium oxide that meets the thermal requirements of microbolometer is relatively complicated
For the amorphous silicon material, due to its large resistance in the application, the 1 / f The noise is large, which affects the detection rate of the device

Method used

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  • Thermosensitive film and preparation method and application thereof
  • Thermosensitive film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] Put the K9 glass substrate into acetone, alcohol, and deionized aqueous solution in order to ultrasonically clean it. After blowing dry with nitrogen, put the substrate into a DC reaction magnetron sputtering furnace, and pump the background vacuum to 1×10 -3 Pa. During this time, the substrate was heated to 200°C. The substrate was blocked by a baffle, and the metal zinc target was pre-sputtered for 10 min with an argon gas flow rate of 100 sccm and a sputtering current of 0.4 A. After the pre-sputtering, keep the argon gas flow rate at 100 sccm and the sputtering current constant, add the oxygen flow rate at 5 sccm, and the working pressure at 1.0 Pa, remove the baffle, and sputter on the substrate for 30 min. During the sputtering process, keep the substrate The rack rotates at a constant speed. After the sputtering is completed, the oxygen flow, the argon flow and the sputtering current are simultaneously turned off. After the sputtering furnace is stabilized, t...

Embodiment approach 2

[0029] Put the K9 glass substrate into acetone, alcohol, and deionized aqueous solution in order to ultrasonically clean it. After blowing dry with nitrogen, put the substrate into a DC reaction magnetron sputtering furnace, and pump the background vacuum to 1×10 -3 Pa. During this time, the substrate was heated to 200°C. The substrate was blocked by a baffle, and the metal zinc target was pre-sputtered for 10 min with an argon gas flow rate of 100 sccm and a sputtering current of 0.4 A. After pre-sputtering, keep the argon gas flow rate at 100 sccm and the sputtering current constant, add the oxygen flow rate at 5 sccm, and the working pressure at 1.0 Pa, remove the baffle, and sputter on the substrate for 20 min. During the sputtering process, keep the substrate The rack rotates at a constant speed. After the sputtering is completed, the oxygen flow, the argon flow and the sputtering current are simultaneously turned off. After the sputtering furnace is stabilized, the b...

Embodiment approach 3

[0032] Put the K9 glass substrate into acetone, alcohol, and deionized aqueous solution in order to ultrasonically clean it. After blowing dry with nitrogen, put the substrate into a DC reaction magnetron sputtering furnace, and pump the background vacuum to 1×10 -3 Pa. During this time, the substrate was heated to 200°C. The substrate was blocked by a baffle, and the metal zinc target was pre-sputtered for 10 min with an argon gas flow rate of 120 sccm and a sputtering current of 0.3 A. After pre-sputtering, keep the argon gas flow rate at 120 sccm and the sputtering current constant, add the oxygen flow rate at 15 sccm, and the working pressure at 1.3Pa, remove the baffle, and sputter on the substrate for 40 min. During the sputtering process, keep the substrate The rack rotates at a constant speed. After the sputtering is completed, the oxygen flow, the argon flow and the sputtering current are simultaneously turned off. After the sputtering furnace is stabilized, the b...

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Abstract

The invention relates to the technical field of non-refrigeration infrared detection and discloses a thermosensitive film and a preparation method and application thereof. The thermosensitive film ismade of a ZnOx material, wherein the data range of x is 0.7-0.95, the thickness is 50 nm-300 nm, the square resistance is 5 KOhm / squ-500 KOhm / squ when the temperature is 25 DEG C, and the temperaturecoefficient of resistance is -1.5% / K- -3.5% / K. The thermosensitive film has long-term stable electrical performance, the resistance and the temperature coefficient of resistance can be compared with those of vanadium oxide, and a new approach is developed for the study of the thermosensitive material for the non-refrigeration infrared devices.

Description

technical field [0001] The invention relates to the technical field of uncooled infrared detection, in particular to a heat-sensitive film and its preparation method and application. Background technique [0002] Infrared imaging technology is a technology that uses the natural radiation infrared rays of detected objects for thermal imaging, detection and identification of targets. The key component of infrared imaging technology is the infrared detector, and infrared detectors are divided into two categories: photon detectors and thermal detectors. Indium antimonide (InSb) detectors (working in the 3-5 µm band) have relatively high performance in terms of sensitivity, response speed, and detection distance, but they must be cooled with liquid nitrogen (about 80K), and infrared imaging is almost impossible. A mechanical scanning device is required, so the entire infrared imaging system appears to have a complex structure and high cost, and cannot be widely applied. Driven ...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35C23C14/58C23C14/02H01C7/04
CPCC23C14/0036C23C14/025C23C14/086C23C14/35C23C14/5806C23C14/5853H01C7/006H01C7/041
Inventor 居勇峰杨潇蒋青松于银山付成芳
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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