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Preparation method for double-selectivity gas sensitive sensor of aluminum-doped tungsten oxide base

A gas sensor, tungsten oxide-based technology, used in instruments, scientific instruments, measuring devices, etc., can solve problems such as poor selectivity, long response-recovery time, and low sensitivity

Active Publication Date: 2019-07-09
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the domestically developed gas sensors have poor selectivity, low sensitivity, and long response-recovery time, and the same gas sensor has not achieved high selectivity and sensitivity to multiple gases.

Method used

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  • Preparation method for double-selectivity gas sensitive sensor of aluminum-doped tungsten oxide base
  • Preparation method for double-selectivity gas sensitive sensor of aluminum-doped tungsten oxide base
  • Preparation method for double-selectivity gas sensitive sensor of aluminum-doped tungsten oxide base

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Preparation of WO by radio frequency sputtering 3 Film: first use absorbent cotton to dip in absolute ethanol (analytical pure) with a purity greater than 99.7% to scrub the silicon substrate and Al 2 o 3 Ceramic tube;

[0043] (1) Install the 99.9% pure W target material used for magnetron sputtering and the 99.9% pure Al target material used for doping on the radio frequency magnetron cathode target and the DC magnetron cathode target respectively. Vacuumize the system, start the mechanical pump, and the mechanical pump pumps air to the magnetron sputtering chamber. When the pointer of the vacuum gauge drops below 20Pa, start the molecular pump, and use the molecular pump to vacuum until the air pressure of the system reaches 6 ×10 -4 Pa.

[0044] (2) After the vacuum is exhausted, rotate the baffle to cover the silicon substrate, and introduce argon gas, so that the RF magnetron cathode W target and the DC magnetron cathode Al target are pre-sputtered in argon fo...

Embodiment 2

[0057] Preparation of WO by radio frequency sputtering 3 Film: first use absorbent cotton to dip in absolute ethanol (analytical pure) with a purity greater than 99.7% to scrub the silicon substrate and Al 2 o 3 Ceramic tube;

[0058] (1) Install the 99.9% pure W target material used for magnetron sputtering and the 99.9% pure Al target material used for doping on the radio frequency magnetron cathode target and the DC magnetron cathode target respectively. Vacuumize the system, start the mechanical pump, and the mechanical pump pumps air to the magnetron sputtering chamber. When the pointer of the vacuum gauge drops below 20Pa, start the molecular pump, and use the molecular pump to vacuum until the air pressure of the system reaches 6 ×10 -4 Pa.

[0059] (2) After the vacuum is exhausted, rotate the baffle to cover the silicon substrate, and introduce argon gas, so that the RF magnetron cathode W target and the DC magnetron cathode Al target are pre-sputtered in argon fo...

Embodiment 3

[0066] Preparation of WO by radio frequency sputtering 3 Thin film, the steps are as in Example 1, the difference is: the volume ratio of passing into the system is: Ar:0 2 = 2:1 gas. The result of the experiment failed, the gas sensor was not sensitive to 1000ppm methanol and 1000ppm ethanol. The reason is that the partial pressure of oxygen near the target is high, which causes a large number of defects on the surface of the film and cannot form a good metal oxide film.

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Abstract

The invention discloses a preparation method for a double-selectivity gas sensitive sensor of an aluminum-doped tungsten oxide base. The method comprises the following steps that: utilizing a magnetron sputtering method to regulate W target sputtering power to 95-110W; turning on a substrate rotation control switch, opening a substrate baffle, introducing oxygen to sputter a WO3 film, and closingoxygen after 20min; regulating Al sputtering power to 40-42W, and sputtering an Al film for 6-10min; introducing the oxygen to sputter the WO3 film for 20min; and preparing a film of an A-B-A sandwichstructure. The gas sensitive sensor disclosed by the invention has the advantages of high selectivity, high sensitivity and short response-recovery time independently for methyl alcohol and ethyl alcohol steam at different working temperatures.

Description

[0001] Technical field: [0002] The invention belongs to a gas sensing device, and is especially suitable for WO with dual selectivity for methanol and ethanol. 3 sensor. [0003] Background technique: [0004] In recent years, traffic accidents caused by drunk driving have occurred frequently, and methanol poisoning has occurred from time to time. Excessive methanol and ethanol gas in the environment will inhibit the central nervous system of the human body, leading to some complications and even shock. Methanol and ethanol are both flammable, and their vapor and air can form explosive mixtures, which can cause combustion and explosion when exposed to open flames or high heat energy, and chemical reactions or combustion can occur when they come into contact with oxidants. With the gradual strengthening of social environmental awareness, gas sensors have been widely used in domestic petroleum, chemical, metallurgy, pharmaceutical, food, medical, road transportation, municipa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 潘国峰崔军蕊何平回广泽王如华中
Owner HEBEI UNIV OF TECH