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A preparation method of aluminum-doped tungsten oxide-based double-selective gas sensor

A gas sensor, tungsten oxide-based technology, used in instruments, scientific instruments, measuring devices, etc., can solve the problems of poor selectivity, low sensitivity, long response-recovery time, etc., and achieve good film quality, good uniformity, Good effect of microstructure

Active Publication Date: 2022-01-04
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the domestically developed gas sensors have poor selectivity, low sensitivity, and long response-recovery time, and the same gas sensor has not achieved high selectivity and sensitivity to multiple gases.

Method used

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  • A preparation method of aluminum-doped tungsten oxide-based double-selective gas sensor
  • A preparation method of aluminum-doped tungsten oxide-based double-selective gas sensor
  • A preparation method of aluminum-doped tungsten oxide-based double-selective gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Preparation of WO by radio frequency sputtering3 Film: first use absorbent cotton to dip in absolute ethanol (analytical pure) with a purity greater than 99.7% to scrub the silicon substrate and Al 2 o 3 Ceramic tube;

[0038] (1) Install the 99.9% pure W target material used for magnetron sputtering and the 99.9% pure Al target material used for doping on the radio frequency magnetron cathode target and the DC magnetron cathode target respectively. Vacuumize the system, start the mechanical pump, and the mechanical pump pumps air to the magnetron sputtering chamber. When the pointer of the vacuum gauge drops below 20Pa, start the molecular pump, and use the molecular pump to vacuum until the air pressure of the system reaches 6 ×10 -4 Pa.

[0039] (2) After the vacuum is exhausted, rotate the baffle to cover the silicon substrate, and introduce argon gas, so that the RF magnetron cathode W target and the DC magnetron cathode Al target are pre-sputtered in argon for ...

Embodiment 2

[0052] Preparation of WO by radio frequency sputtering 3 Film: first use absorbent cotton to dip in absolute ethanol (analytical pure) with a purity greater than 99.7% to scrub the silicon substrate and Al 2 o 3 Ceramic tube;

[0053] (1) Install the 99.9% pure W target material used for magnetron sputtering and the 99.9% pure Al target material used for doping on the radio frequency magnetron cathode target and the DC magnetron cathode target respectively. Vacuumize the system, start the mechanical pump, and the mechanical pump pumps air to the magnetron sputtering chamber. When the pointer of the vacuum gauge drops below 20Pa, start the molecular pump, and use the molecular pump to vacuum until the air pressure of the system reaches 6 ×10 -4 Pa.

[0054] (2) After the vacuum is exhausted, rotate the baffle to cover the silicon substrate, and introduce argon gas, so that the RF magnetron cathode W target and the DC magnetron cathode Al target are pre-sputtered in argon fo...

Embodiment 3

[0061] Preparation of WO by radio frequency sputtering 3 Thin film, the steps are as in Example 1, the difference is: the volume ratio of passing into the system is: Ar:0 2 = 2:1 gas. The result of the experiment failed, the gas sensor was not sensitive to 1000ppm methanol and 1000ppm ethanol. The reason is that the partial pressure of oxygen near the target is high, which causes a large number of defects on the surface of the film and cannot form a good metal oxide film.

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Abstract

The invention relates to a preparation method of an aluminum-doped tungsten oxide-based double-selectivity gas sensor. The method utilizes the magnetron sputtering method, adjusts the sputtering power of the W target to 95‑110W, turns on the substrate rotation control switch, opens the substrate baffle, and sputters WO through oxygen. 3 thin film, after 20min, turn off the oxygen; adjust the Al target sputtering power to 40-42W, sputter the Al thin film for 6-10min; then pass oxygen to sputter WO 3 Film for 20 minutes; A-B-A sandwich structure film was prepared. The gas sensor of the present invention has the advantages of high selectivity, high sensitivity and short response-recovery time to methanol and ethanol vapor respectively at different working temperatures.

Description

Technical field: [0001] The invention belongs to a gas sensing device, and is especially suitable for WO with dual selectivity for methanol and ethanol. 3 sensor. Background technique: [0002] In recent years, traffic accidents caused by drunk driving have occurred frequently, and methanol poisoning has occurred from time to time. Excessive methanol and ethanol gas in the environment will inhibit the central nervous system of the human body, leading to some complications and even shock. Methanol and ethanol are both flammable, and their vapor and air can form explosive mixtures, which can cause combustion and explosion when exposed to open flames or high heat energy, and chemical reactions or combustion can occur when they come into contact with oxidants. With the gradual strengthening of social environmental awareness, gas sensors have been widely used in domestic petroleum, chemical, metallurgy, pharmaceutical, food, medical, road transportation, municipal gas, digital ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 潘国峰崔军蕊何平回广泽王如华中
Owner HEBEI UNIV OF TECH