Nonvalatile dual-mode resistive random access memory and preparation method thereof

Abstract

The invention belongs to the field of resistive random access memory devices, and relates to a dual-mode resistive random access memory prepared by interface engineering in a universal mode and a preparation method thereof. The memory comprises a lower electrode with a nano structure on the surface, an intermediate functional layer with nano holes on the surface and an upper electrode. Specifically, conductive reduced graphene oxide (rGO) with a nano-folded surface is used as a lower electrode; the intermediate functional layer is an intermediate active layer which is formed by spin-coating ofan organic polymer material on the surface of the lower electrode under a certain humidity to form surface holes; aluminum is deposited (Al) is used as the upper electrode. Finally, a nonvolatile dual-mode resistive random access memory is prepared. The memory has a simple structure, excellent performances and function diversification, is simple in preparation process and low in cost, and has a wide application prospect in the intelligent memory field.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a nonvolatile dual-mode resistive variable memory and a preparation method thereof. Background technique [0002] With the explosive growth of data, massive amounts of information appear in our lives. At the same time, the storage of these massive amounts of information has become a major challenge for the development of storage technology. Fast read and write speed, more convenient use, lower cost and higher environmental protection performance have become the inevitable trend of memory development under the current "big data" background. Currently, the application of organic electronic devices to replace silicon-based electronics has achieved good results. For example, an organic light emitting device is realized by using an organic light emitting material. The important thing is that organic resistive memory realizes flash memory (Flash) memory by adopting filam...

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Problems solved by technology

However, it is challenging to realize two memory modes or more functions based on a single memory element

[0005] Traditional memory is mainly focused on a single storage function device. With the advent of the "post-Moore" era, the traditional single function memory has become increasingly unable to meet people's needs. Therefore, the design and preparation of multifunctional memory has become one of the current developments in semiconductor science. Urgent problems

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